Projects per year
Abstract
Experimental data and a supporting model are presented for the formation of voids in InN nanorods grown by selective area hydride vapor phase epitaxy on patterned GaN/c-Al 2 O 3 templates. It is shown that these voids shape, due to a high lattice mismatch between InN and GaN materials, starts from the base and extends up to a half of the total length of the nanorods. When the effect of the mismatch between substrate and nanorods becomes weaker, the hollow nanotubes close up at the top and further growth proceeds in the standard nanowire geometry without voids. This effect is observed within a wide range of growth conditions during the InN synthesis and must be taken into account for controlling the final structure of InN nanorods for different device applications.
Original language | English |
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Article number | 025002 |
Pages (from-to) | 1-7 |
Journal | Nano Futures |
Volume | 4 |
Issue number | 2 |
Early online date | 27 Mar 2020 |
DOIs | |
Publication status | Published - 29 May 2020 |
Keywords
- Hydride vapor phase epitaxy
- Indium nitride
- Nanorods
- Selective area growth
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Atomic and Molecular Physics, and Optics
- Biomedical Engineering
- Materials Science(all)
- Electrical and Electronic Engineering
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Dive into the research topics of 'Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates'. Together they form a unique fingerprint.Projects
- 2 Finished
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Manufacturing of Nano-Engineered III-N Semiconductors
Shields, P., Allsopp, D. & Wang, W.
Engineering and Physical Sciences Research Council
1/05/15 → 30/09/21
Project: Research council
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Manufacturing of Nano-Engineered III-N Semiconductors - Equipment
Shields, P. & Allsopp, D.
Engineering and Physical Sciences Research Council
1/02/15 → 31/01/20
Project: Research council