Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates

Mohammed Zeghouane; Yamina André; Geoffrey Avit; Jihen Jridi; Catherine Bougerol; Pierre-marie Coulon; Pierre Ferret; Dominique Castelluci; Evelyne Gil; Philip Shields; Vladimir G Dubrovskii; Agnès Trassoudaine

doi:10.1088/2399-1984/ab8450

Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates

Mohammed Zeghouane, Yamina André, Geoffrey Avit, Jihen Jridi, Catherine Bougerol, Pierre-marie Coulon, Pierre Ferret, Dominique Castelluci, Evelyne Gil, Philip Shields, Vladimir G Dubrovskii, Agnès Trassoudaine

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Abstract

Experimental data and a supporting model are presented for the formation of voids in InN nanorods grown by selective area hydride vapor phase epitaxy on patterned GaN/c-Al ₂ O ₃ templates. It is shown that these voids shape, due to a high lattice mismatch between InN and GaN materials, starts from the base and extends up to a half of the total length of the nanorods. When the effect of the mismatch between substrate and nanorods becomes weaker, the hollow nanotubes close up at the top and further growth proceeds in the standard nanowire geometry without voids. This effect is observed within a wide range of growth conditions during the InN synthesis and must be taken into account for controlling the final structure of InN nanorods for different device applications.

Original language	English
Article number	025002
Pages (from-to)	1-7
Journal	Nano Futures
Volume	4
Issue number	2
Early online date	27 Mar 2020
DOIs	https://doi.org/10.1088/2399-1984/ab8450
Publication status	Published - 29 May 2020

Keywords

Hydride vapor phase epitaxy
Indium nitride
Nanorods
Selective area growth

ASJC Scopus subject areas

Bioengineering
General Chemistry
Atomic and Molecular Physics, and Optics
Biomedical Engineering
General Materials Science
Electrical and Electronic Engineering

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10.1088/2399-1984/ab8450

NANOF-100268_PDF
This is an author-created, un-copyedited version of an article published in Nano Futures. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://iopscience.iop.org/article/10.1088/2399-1984/ab8450
Accepted author manuscript, 539 KBLicence: Unspecified

https://iopscience.iop.org/article/10.1088/2399-1984/ab8450

Cite this

@article{11e4650bcb524a75b14940bf072990bb,

title = "Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates",

abstract = "Experimental data and a supporting model are presented for the formation of voids in InN nanorods grown by selective area hydride vapor phase epitaxy on patterned GaN/c-Al 2 O 3 templates. It is shown that these voids shape, due to a high lattice mismatch between InN and GaN materials, starts from the base and extends up to a half of the total length of the nanorods. When the effect of the mismatch between substrate and nanorods becomes weaker, the hollow nanotubes close up at the top and further growth proceeds in the standard nanowire geometry without voids. This effect is observed within a wide range of growth conditions during the InN synthesis and must be taken into account for controlling the final structure of InN nanorods for different device applications. ",

keywords = "Hydride vapor phase epitaxy, Indium nitride, Nanorods, Selective area growth",

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month = may,

day = "29",

doi = "10.1088/2399-1984/ab8450",

language = "English",

volume = "4",

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T1 - Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates

AU - Zeghouane, Mohammed

AU - André, Yamina

AU - Avit, Geoffrey

AU - Jridi, Jihen

AU - Bougerol, Catherine

AU - Coulon, Pierre-marie

AU - Ferret, Pierre

AU - Castelluci, Dominique

AU - Gil, Evelyne

AU - Shields, Philip

AU - Dubrovskii, Vladimir G

AU - Trassoudaine, Agnès

PY - 2020/5/29

Y1 - 2020/5/29

N2 - Experimental data and a supporting model are presented for the formation of voids in InN nanorods grown by selective area hydride vapor phase epitaxy on patterned GaN/c-Al 2 O 3 templates. It is shown that these voids shape, due to a high lattice mismatch between InN and GaN materials, starts from the base and extends up to a half of the total length of the nanorods. When the effect of the mismatch between substrate and nanorods becomes weaker, the hollow nanotubes close up at the top and further growth proceeds in the standard nanowire geometry without voids. This effect is observed within a wide range of growth conditions during the InN synthesis and must be taken into account for controlling the final structure of InN nanorods for different device applications.

AB - Experimental data and a supporting model are presented for the formation of voids in InN nanorods grown by selective area hydride vapor phase epitaxy on patterned GaN/c-Al 2 O 3 templates. It is shown that these voids shape, due to a high lattice mismatch between InN and GaN materials, starts from the base and extends up to a half of the total length of the nanorods. When the effect of the mismatch between substrate and nanorods becomes weaker, the hollow nanotubes close up at the top and further growth proceeds in the standard nanowire geometry without voids. This effect is observed within a wide range of growth conditions during the InN synthesis and must be taken into account for controlling the final structure of InN nanorods for different device applications.

KW - Hydride vapor phase epitaxy

KW - Indium nitride

KW - Nanorods

KW - Selective area growth

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U2 - 10.1088/2399-1984/ab8450

DO - 10.1088/2399-1984/ab8450

M3 - Article

SN - 2399-1984

VL - 4

SP - 1

EP - 7

JO - Nano Futures

JF - Nano Futures

IS - 2

M1 - 025002

ER -

Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates

Abstract

Keywords

ASJC Scopus subject areas

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Manufacturing of Nano-Engineered III-N Semiconductors

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Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

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Fingerprint

Projects

Manufacturing of Nano-Engineered III-N Semiconductors

Manufacturing of Nano-Engineered III-N Semiconductors - Equipment

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