Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates

Mohammed Zeghouane, Yamina André, Geoffrey Avit, Jihen Jridi, Catherine Bougerol, Pierre-marie Coulon, Pierre Ferret, Dominique Castelluci, Evelyne Gil, Philip Shields, Vladimir G Dubrovskii, Agnès Trassoudaine

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Experimental data and a supporting model are presented for the formation of voids in InN nanorods grown by selective area hydride vapor phase epitaxy on patterned GaN/c-Al 2 O 3 templates. It is shown that these voids shape, due to a high lattice mismatch between InN and GaN materials, starts from the base and extends up to a half of the total length of the nanorods. When the effect of the mismatch between substrate and nanorods becomes weaker, the hollow nanotubes close up at the top and further growth proceeds in the standard nanowire geometry without voids. This effect is observed within a wide range of growth conditions during the InN synthesis and must be taken into account for controlling the final structure of InN nanorods for different device applications.

Original languageEnglish
Article number025002
Pages (from-to)1-7
JournalNano Futures
Issue number2
Early online date27 Mar 2020
Publication statusPublished - 29 May 2020


  • Hydride vapor phase epitaxy
  • Indium nitride
  • Nanorods
  • Selective area growth

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Materials Science(all)
  • Electrical and Electronic Engineering


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