Formation of Cu3BiS3 thin films via sulfurization of Bi-Cu metal precursors

Diego Colombara, Laurence M Peter, K Hutchings, K D Rogers, S Schäfer, Jesse T R Dufton, M Saiful Islam

Research output: Contribution to journalArticle

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Abstract

Thin films of Cu 3BiS 3 have been produced by conversion of stacked and co-electroplated Bi-Cu metal precursors in the presence of elemental sulfur vapor. The roles of sulfurization temperature and heating rate in achieving single-phase good quality layers have been explored. The potential loss of Bi during the treatments has been investigated, and no appreciable compositional difference was found between films sulfurized at 550 °C for up to 16 h. The structural, morphological and photoelectrochemical properties of the layers were investigated in order to evaluate the potentials of the compound for application in thin film photovoltaics.
LanguageEnglish
Pages5165-5171
JournalThin Solid Films
Volume520
Issue number16
DOIs
StatusPublished - 1 Jun 2012

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Metals
Thin films
thin films
Heating rate
Sulfur
metals
sulfur
Vapors
vapors
heating
Temperature
temperature

Cite this

Colombara, D., Peter, L. M., Hutchings, K., Rogers, K. D., Schäfer, S., Dufton, J. T. R., & Islam, M. S. (2012). Formation of Cu3BiS3 thin films via sulfurization of Bi-Cu metal precursors. DOI: 10.1016/j.tsf.2012.04.003

Formation of Cu3BiS3 thin films via sulfurization of Bi-Cu metal precursors. / Colombara, Diego; Peter, Laurence M; Hutchings, K; Rogers, K D; Schäfer, S; Dufton, Jesse T R; Islam, M Saiful.

In: Thin Solid Films, Vol. 520, No. 16, 01.06.2012, p. 5165-5171.

Research output: Contribution to journalArticle

Colombara, D, Peter, LM, Hutchings, K, Rogers, KD, Schäfer, S, Dufton, JTR & Islam, MS 2012, 'Formation of Cu3BiS3 thin films via sulfurization of Bi-Cu metal precursors' Thin Solid Films, vol. 520, no. 16, pp. 5165-5171. DOI: 10.1016/j.tsf.2012.04.003
Colombara D, Peter LM, Hutchings K, Rogers KD, Schäfer S, Dufton JTR et al. Formation of Cu3BiS3 thin films via sulfurization of Bi-Cu metal precursors. Thin Solid Films. 2012 Jun 1;520(16):5165-5171. Available from, DOI: 10.1016/j.tsf.2012.04.003
Colombara, Diego ; Peter, Laurence M ; Hutchings, K ; Rogers, K D ; Schäfer, S ; Dufton, Jesse T R ; Islam, M Saiful. / Formation of Cu3BiS3 thin films via sulfurization of Bi-Cu metal precursors. In: Thin Solid Films. 2012 ; Vol. 520, No. 16. pp. 5165-5171
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