Formation of Cu3BiS3 thin films via sulfurization of Bi-Cu metal precursors

Diego Colombara; Laurence M Peter; K Hutchings; K D Rogers; S Schäfer; Jesse T R Dufton; M Saiful Islam

doi:10.1016/j.tsf.2012.04.003

Formation of Cu3BiS3 thin films via sulfurization of Bi-Cu metal precursors

Diego Colombara, Laurence M Peter, K Hutchings, K D Rogers, S Schäfer, Jesse T R Dufton, M Saiful Islam

Department of Chemistry

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Abstract

Thin films of Cu 3BiS 3 have been produced by conversion of stacked and co-electroplated Bi-Cu metal precursors in the presence of elemental sulfur vapor. The roles of sulfurization temperature and heating rate in achieving single-phase good quality layers have been explored. The potential loss of Bi during the treatments has been investigated, and no appreciable compositional difference was found between films sulfurized at 550 °C for up to 16 h. The structural, morphological and photoelectrochemical properties of the layers were investigated in order to evaluate the potentials of the compound for application in thin film photovoltaics.

Original language	English
Pages (from-to)	5165-5171
Journal	Thin Solid Films
Volume	520
Issue number	16
DOIs	https://doi.org/10.1016/j.tsf.2012.04.003
Publication status	Published - 1 Jun 2012

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10.1016/j.tsf.2012.04.003

Colombara_ThinSolidFilms_2012.pdf
NOTICE: this is the author’s version of a work that was accepted for publication in Thin Solid Films. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Thin Solid Films, 2012, vol 520, issue 16, DOI 10.1016/j.tsf.2012.04.003
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Cite this

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title = "Formation of Cu3BiS3 thin films via sulfurization of Bi-Cu metal precursors",

abstract = "Thin films of Cu 3BiS 3 have been produced by conversion of stacked and co-electroplated Bi-Cu metal precursors in the presence of elemental sulfur vapor. The roles of sulfurization temperature and heating rate in achieving single-phase good quality layers have been explored. The potential loss of Bi during the treatments has been investigated, and no appreciable compositional difference was found between films sulfurized at 550 °C for up to 16 h. The structural, morphological and photoelectrochemical properties of the layers were investigated in order to evaluate the potentials of the compound for application in thin film photovoltaics.",

author = "Diego Colombara and Peter, {Laurence M} and K Hutchings and Rogers, {K D} and S Sch{\"a}fer and Dufton, {Jesse T R} and Islam, {M Saiful}",

year = "2012",

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doi = "10.1016/j.tsf.2012.04.003",

language = "English",

volume = "520",

pages = "5165--5171",

journal = "Thin Solid Films",

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T1 - Formation of Cu3BiS3 thin films via sulfurization of Bi-Cu metal precursors

AU - Colombara, Diego

AU - Peter, Laurence M

AU - Hutchings, K

AU - Rogers, K D

AU - Schäfer, S

AU - Dufton, Jesse T R

AU - Islam, M Saiful

PY - 2012/6/1

Y1 - 2012/6/1

N2 - Thin films of Cu 3BiS 3 have been produced by conversion of stacked and co-electroplated Bi-Cu metal precursors in the presence of elemental sulfur vapor. The roles of sulfurization temperature and heating rate in achieving single-phase good quality layers have been explored. The potential loss of Bi during the treatments has been investigated, and no appreciable compositional difference was found between films sulfurized at 550 °C for up to 16 h. The structural, morphological and photoelectrochemical properties of the layers were investigated in order to evaluate the potentials of the compound for application in thin film photovoltaics.

AB - Thin films of Cu 3BiS 3 have been produced by conversion of stacked and co-electroplated Bi-Cu metal precursors in the presence of elemental sulfur vapor. The roles of sulfurization temperature and heating rate in achieving single-phase good quality layers have been explored. The potential loss of Bi during the treatments has been investigated, and no appreciable compositional difference was found between films sulfurized at 550 °C for up to 16 h. The structural, morphological and photoelectrochemical properties of the layers were investigated in order to evaluate the potentials of the compound for application in thin film photovoltaics.

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UR - http://dx.doi.org/10.1016/j.tsf.2012.04.003

U2 - 10.1016/j.tsf.2012.04.003

DO - 10.1016/j.tsf.2012.04.003

M3 - Article

SN - 0040-6090

VL - 520

SP - 5165

EP - 5171

JO - Thin Solid Films

JF - Thin Solid Films

IS - 16

ER -

Formation of Cu3BiS3 thin films via sulfurization of Bi-Cu metal precursors

Abstract

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SUPERGEN: Photovoltaic Materials for the 21st Century

Autolab Potentiostat & FRA32M module

MC2-Electron Microscopy (EM)

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Formation of Cu3BiS3 thin films via sulfurization of Bi-Cu metal precursors

Abstract

Access to Document

Other files and links

Fingerprint

Projects

SUPERGEN: Photovoltaic Materials for the 21st Century

Equipment

Autolab Potentiostat & FRA32M module

MC2-Electron Microscopy (EM)

Cite this