Focused ion beam etching of GaN

C. Flierl; I. H. White; M. Kuball; P. J. Heard; G. C. Allen; C. Marinelli; J. M. Rorison; R. V. Penty; Y. Chen; S. Y. Wang

Focused ion beam etching of GaN

C. Flierl, I. H. White, M. Kuball, P. J. Heard, G. C. Allen, C. Marinelli, J. M. Rorison, R. V. Penty, Y. Chen, S. Y. Wang

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching - a well-established technique for optical mask repair and for IC failure analysis and repair - without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5×10^-4μm³/pC. At a current of 3nA, for example, this corresponds to an etch rate of 1.05 μm³/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Changes in the roughness of the etched surface plane stay below 8nm.

Original language	English
Journal	Materials Research Society Symposium - Proceedings
Volume	537
Publication status	Published - 1 Dec 1999
Event	Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' - Boston, MA, USA Duration: 30 Nov 1998 → 4 Dec 1998

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{7d472c3bbe9f48edaeb91830dba5dbab,

title = "Focused ion beam etching of GaN",

abstract = "We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching - a well-established technique for optical mask repair and for IC failure analysis and repair - without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5×10-4μm3/pC. At a current of 3nA, for example, this corresponds to an etch rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Changes in the roughness of the etched surface plane stay below 8nm.",

author = "C. Flierl and White, {I. H.} and M. Kuball and Heard, {P. J.} and Allen, {G. C.} and C. Marinelli and Rorison, {J. M.} and Penty, {R. V.} and Y. Chen and Wang, {S. Y.}",

year = "1999",

month = dec,

day = "1",

language = "English",

volume = "537",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' ; Conference date: 30-11-1998 Through 04-12-1998",

}

TY - JOUR

T1 - Focused ion beam etching of GaN

AU - Flierl, C.

AU - White, I. H.

AU - Kuball, M.

AU - Heard, P. J.

AU - Allen, G. C.

AU - Marinelli, C.

AU - Rorison, J. M.

AU - Penty, R. V.

AU - Chen, Y.

AU - Wang, S. Y.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching - a well-established technique for optical mask repair and for IC failure analysis and repair - without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5×10-4μm3/pC. At a current of 3nA, for example, this corresponds to an etch rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Changes in the roughness of the etched surface plane stay below 8nm.

AB - We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching - a well-established technique for optical mask repair and for IC failure analysis and repair - without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5×10-4μm3/pC. At a current of 3nA, for example, this corresponds to an etch rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Changes in the roughness of the etched surface plane stay below 8nm.

UR - http://www.scopus.com/inward/record.url?scp=0033356058&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033356058

SN - 0272-9172

VL - 537

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys'

Y2 - 30 November 1998 through 4 December 1998

ER -

Focused ion beam etching of GaN

Abstract

ASJC Scopus subject areas

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