Fluorine-vacancy complexes in ultrashallow B-implanted Si

D A Abdulmalik; P G Coleman; N E B Cowern; A J Smith; B J Sealy; W Lerch; S Paul; F Cristiano

Fluorine-vacancy complexes in ultrashallow B-implanted Si

D A Abdulmalik
, P G Coleman
, N E B Cowern
, A J Smith
, B J Sealy
, W Lerch
, S Paul
, F Cristiano

Department of Physics

Research output: Contribution to journal › Article › peer-review

21 Citations (SciVal)

Original language	English
Journal	Applied Physics Letters
Volume	89
Issue number	5
Publication status	Published - 2006

Bibliographical note

ID number: ISI:000239520200055

Cite this

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title = "Fluorine-vacancy complexes in ultrashallow B-implanted Si",

author = "Abdulmalik, \{D A\} and Coleman, \{P G\} and Cowern, \{N E B\} and Smith, \{A J\} and Sealy, \{B J\} and W Lerch and S Paul and F Cristiano",

note = "ID number: ISI:000239520200055",

year = "2006",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

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TY - JOUR

T1 - Fluorine-vacancy complexes in ultrashallow B-implanted Si

AU - Abdulmalik, D A

AU - Coleman, P G

AU - Cowern, N E B

AU - Smith, A J

AU - Sealy, B J

AU - Lerch, W

AU - Paul, S

AU - Cristiano, F

N1 - ID number: ISI:000239520200055

PY - 2006

Y1 - 2006

M3 - Article

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -