Fluorine-vacancy complexes in ultrashallow B-implanted Si

D A Abdulmalik, P G Coleman, N E B Cowern, A J Smith, B J Sealy, W Lerch, S Paul, F Cristiano

Research output: Contribution to journal › Article › peer-review

21 Citations (SciVal)

ID number: ISI:000239520200055

Cite this

@article{951fb61b243340b98d5aa11e6ef7cc7b,

title = "Fluorine-vacancy complexes in ultrashallow B-implanted Si",

author = "Abdulmalik, {D A} and Coleman, {P G} and Cowern, {N E B} and Smith, {A J} and Sealy, {B J} and W Lerch and S Paul and F Cristiano",

note = "ID number: ISI:000239520200055",

year = "2006",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Fluorine-vacancy complexes in ultrashallow B-implanted Si

AU - Abdulmalik, D A

AU - Coleman, P G

AU - Cowern, N E B

AU - Smith, A J

AU - Sealy, B J

AU - Lerch, W

AU - Paul, S

AU - Cristiano, F

N1 - ID number: ISI:000239520200055

PY - 2006

Y1 - 2006

M3 - Article

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -