First demonstration of two photon absorption in a semiconductor waveguide pumped by a diode laser

H. K. Tsang, P. P. Vasil'ev, I. H. White, R. V. Penty, J. S. Aitchison

Research output: Contribution to journalArticle

Abstract

For the first time, lasers have been used to induce a fast all-optical nonresonant nonlinearity at wavelengths well beyond the band edge in a GaAs/GaAlAs multiquantum well waveguide. Using a Q-switched diode laser, which gave optical pulses of 3.5 ps duration and 7W peak power, an intensity-dependent transmission was recorded that was consistent with the presence of two photon absorption in the waveguide. The measured two photon absorption coefficient was 11°2cm/GW.

Original languageEnglish
Pages (from-to)1660-1661
Number of pages2
JournalElectronics Letters
Volume29
Issue number18
DOIs
Publication statusPublished - 1 Jan 1993

Keywords

  • Nonlinear optics
  • Optical waveguides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

First demonstration of two photon absorption in a semiconductor waveguide pumped by a diode laser. / Tsang, H. K.; Vasil'ev, P. P.; White, I. H.; Penty, R. V.; Aitchison, J. S.

In: Electronics Letters, Vol. 29, No. 18, 01.01.1993, p. 1660-1661.

Research output: Contribution to journalArticle

Tsang, H. K. ; Vasil'ev, P. P. ; White, I. H. ; Penty, R. V. ; Aitchison, J. S. / First demonstration of two photon absorption in a semiconductor waveguide pumped by a diode laser. In: Electronics Letters. 1993 ; Vol. 29, No. 18. pp. 1660-1661.
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