Finite-length mask effects in the isolation oxidation of silicon

J. D. Evans; A. B. Tayler; J. R. King

doi:10.1093/imamat/58.2.121

Finite-length mask effects in the isolation oxidation of silicon

J. D. Evans
, A. B. Tayler
, J. R. King

University of Oxford
Department of Theoretical Mechanics
University of Nottingham

Research output: Contribution to journal › Article › peer-review

8 Citations (SciVal)

Abstract

A moving-boundary problem modelling the two-dimensional isolation oxidation of silicon is analysed in the limit of reaction-controlled oxidation for a finite-length nitride mask. Encroachment under the mask caused by silicon oxidation then occurs from both sides to produce two 'bird's beaks', and it is the interaction between these beaks on which attention is focused. This effect, termed 'bird's beak punchthrough', is currently of interest in submicron silicon-isolation technologies.

Original language	English
Pages (from-to)	121-146
Number of pages	26
Journal	IMA Journal of Applied Mathematics (Institute of Mathematics and Its Applications)
Volume	58
Issue number	2
DOIs	https://doi.org/10.1093/imamat/58.2.121
Publication status	Published - Apr 1997

ASJC Scopus subject areas

Applied Mathematics

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10.1093/imamat/58.2.121

Cite this

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abstract = "A moving-boundary problem modelling the two-dimensional isolation oxidation of silicon is analysed in the limit of reaction-controlled oxidation for a finite-length nitride mask. Encroachment under the mask caused by silicon oxidation then occurs from both sides to produce two 'bird's beaks', and it is the interaction between these beaks on which attention is focused. This effect, termed 'bird's beak punchthrough', is currently of interest in submicron silicon-isolation technologies.",

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AU - King, J. R.

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AB - A moving-boundary problem modelling the two-dimensional isolation oxidation of silicon is analysed in the limit of reaction-controlled oxidation for a finite-length nitride mask. Encroachment under the mask caused by silicon oxidation then occurs from both sides to produce two 'bird's beaks', and it is the interaction between these beaks on which attention is focused. This effect, termed 'bird's beak punchthrough', is currently of interest in submicron silicon-isolation technologies.

UR - https://www.scopus.com/pages/publications/0031118025

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DO - 10.1093/imamat/58.2.121

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Finite-length mask effects in the isolation oxidation of silicon

Abstract

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