Electro-chemical etching of heavily doped, (110) oriented, p(+) (boron) doped silicon wafers results in porous silicon (PSi) layers which exhibit a strong in-plane anisotropy of the refractive index (birefringence). Single- and multiple layers of anisotropically nanostructured silicon (Si) have been fabricated and studied by polarization-resolved reflection and transmission measurements. Dielectric stacks of birefringent PSi acting as distributed Bragg reflectors have two distinct reflection bands depending on the polarization of the incident linearly polarized light. This effect is caused by a three-dimensional (in plane and in-depth) variation of the refraction index. The possibility of fine tuning the two orthogonally polarized reflection bands and their spectral splitting is demonstrated.
|Number of pages||4|
|Journal||Physica Status Solidi A: Applications and Materials Science|
|Publication status||Published - 2003|