Fine tuning of the dichroic behavior of Bragg reflectors based on anisotropically nanostructured silicon

J Diener, N Kunzner, D Kovalev, E Gross, F Koch, M Fujii

Research output: Contribution to journalArticle

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Abstract

Electro-chemical etching of heavily doped, (110) oriented, p(+) (boron) doped silicon wafers results in porous silicon (PSi) layers which exhibit a strong in-plane anisotropy of the refractive index (birefringence). Single- and multiple layers of anisotropically nanostructured silicon (Si) have been fabricated and studied by polarization-resolved reflection and transmission measurements. Dielectric stacks of birefringent PSi acting as distributed Bragg reflectors have two distinct reflection bands depending on the polarization of the incident linearly polarized light. This effect is caused by a three-dimensional (in plane and in-depth) variation of the refraction index. The possibility of fine tuning the two orthogonally polarized reflection bands and their spectral splitting is demonstrated.
Original languageEnglish
Pages (from-to)582-585
Number of pages4
JournalPhysica Status Solidi A: Applications and Materials Science
Volume197
Issue number2
DOIs
Publication statusPublished - 2003

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Bragg reflectors
Silicon
Tuning
Porous silicon
tuning
porous silicon
silicon
Polarization
Electrochemical etching
Distributed Bragg reflectors
Boron
polarization
Light polarization
Birefringence
Refraction
Silicon wafers
polarized light
birefringence
refraction
Refractive index

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Fine tuning of the dichroic behavior of Bragg reflectors based on anisotropically nanostructured silicon. / Diener, J; Kunzner, N; Kovalev, D; Gross, E; Koch, F; Fujii, M.

In: Physica Status Solidi A: Applications and Materials Science, Vol. 197, No. 2, 2003, p. 582-585.

Research output: Contribution to journalArticle

Diener, J ; Kunzner, N ; Kovalev, D ; Gross, E ; Koch, F ; Fujii, M. / Fine tuning of the dichroic behavior of Bragg reflectors based on anisotropically nanostructured silicon. In: Physica Status Solidi A: Applications and Materials Science. 2003 ; Vol. 197, No. 2. pp. 582-585.
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AU - Koch, F

AU - Fujii, M

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AB - Electro-chemical etching of heavily doped, (110) oriented, p(+) (boron) doped silicon wafers results in porous silicon (PSi) layers which exhibit a strong in-plane anisotropy of the refractive index (birefringence). Single- and multiple layers of anisotropically nanostructured silicon (Si) have been fabricated and studied by polarization-resolved reflection and transmission measurements. Dielectric stacks of birefringent PSi acting as distributed Bragg reflectors have two distinct reflection bands depending on the polarization of the incident linearly polarized light. This effect is caused by a three-dimensional (in plane and in-depth) variation of the refraction index. The possibility of fine tuning the two orthogonally polarized reflection bands and their spectral splitting is demonstrated.

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