Feynman path-integral treatment of carrier localisation in potential fluctuations wells due to the randomly distributed charges at the semiconductor-insulator interface in MIS-structures

G Slavcheva; Ivan Yanchev

Feynman path-integral treatment of carrier localisation in potential fluctuations wells due to the randomly distributed charges at the semiconductor-insulator interface in MIS-structures

G Slavcheva, Ivan Yanchev

Department of Physics

Research output: Contribution to conference › Paper › peer-review

Original language	English
Publication status	Published - 1994
Event	NATO ASI Fabrication, Properties and Applications of Low-Dimensional Semiconductors - Sozopol, Bulgaria Duration: 15 Sept 1994 → …

Conference

Conference	NATO ASI Fabrication, Properties and Applications of Low-Dimensional Semiconductors
Country/Territory	Bulgaria
City	Sozopol
Period	15/09/94 → …

Cite this

Feynman path-integral treatment of carrier localisation in potential fluctuations wells due to the randomly distributed charges at the semiconductor-insulator interface in MIS-structures. / Slavcheva, G; Yanchev, Ivan.
1994. Paper presented at NATO ASI Fabrication, Properties and Applications of Low-Dimensional Semiconductors, Sozopol, Bulgaria.

Research output: Contribution to conference › Paper › peer-review

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language = "English",

note = "NATO ASI Fabrication, Properties and Applications of Low-Dimensional Semiconductors ; Conference date: 15-09-1994",

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AU - Yanchev, Ivan

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M3 - Paper

T2 - NATO ASI Fabrication, Properties and Applications of Low-Dimensional Semiconductors

Y2 - 15 September 1994

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