Feynman path-integral treatment of carrier localisation in potential fluctuations wells due to the randomly distributed charges at the semiconductor-insulator interface in MIS-structures

G Slavcheva, Ivan Yanchev

Research output: Contribution to conferencePaper

Original languageEnglish
Publication statusPublished - 1994
EventNATO ASI Fabrication, Properties and Applications of Low-Dimensional Semiconductors - Sozopol, Bulgaria
Duration: 15 Sep 1994 → …

Conference

ConferenceNATO ASI Fabrication, Properties and Applications of Low-Dimensional Semiconductors
CountryBulgaria
CitySozopol
Period15/09/94 → …

Cite this

Slavcheva, G., & Yanchev, I. (1994). Feynman path-integral treatment of carrier localisation in potential fluctuations wells due to the randomly distributed charges at the semiconductor-insulator interface in MIS-structures. Paper presented at NATO ASI Fabrication, Properties and Applications of Low-Dimensional Semiconductors, Sozopol, Bulgaria.