Feynman path-integral treatment of carrier localisation in potential fluctuations wells due to the randomly distributed charges at the semiconductor-insulator interface in MIS-structures

G Slavcheva, Ivan Yanchev

Research output: Contribution to conferencePaper

Original languageEnglish
Publication statusPublished - 1994
EventNATO ASI Fabrication, Properties and Applications of Low-Dimensional Semiconductors - Sozopol, Bulgaria
Duration: 15 Sep 1994 → …

Conference

ConferenceNATO ASI Fabrication, Properties and Applications of Low-Dimensional Semiconductors
CountryBulgaria
CitySozopol
Period15/09/94 → …

Cite this

Slavcheva, G., & Yanchev, I. (1994). Feynman path-integral treatment of carrier localisation in potential fluctuations wells due to the randomly distributed charges at the semiconductor-insulator interface in MIS-structures. Paper presented at NATO ASI Fabrication, Properties and Applications of Low-Dimensional Semiconductors, Sozopol, Bulgaria.

Feynman path-integral treatment of carrier localisation in potential fluctuations wells due to the randomly distributed charges at the semiconductor-insulator interface in MIS-structures. / Slavcheva, G; Yanchev, Ivan.

1994. Paper presented at NATO ASI Fabrication, Properties and Applications of Low-Dimensional Semiconductors, Sozopol, Bulgaria.

Research output: Contribution to conferencePaper

Slavcheva, G & Yanchev, I 1994, 'Feynman path-integral treatment of carrier localisation in potential fluctuations wells due to the randomly distributed charges at the semiconductor-insulator interface in MIS-structures' Paper presented at NATO ASI Fabrication, Properties and Applications of Low-Dimensional Semiconductors, Sozopol, Bulgaria, 15/09/94, .
Slavcheva G, Yanchev I. Feynman path-integral treatment of carrier localisation in potential fluctuations wells due to the randomly distributed charges at the semiconductor-insulator interface in MIS-structures. 1994. Paper presented at NATO ASI Fabrication, Properties and Applications of Low-Dimensional Semiconductors, Sozopol, Bulgaria.
Slavcheva, G ; Yanchev, Ivan. / Feynman path-integral treatment of carrier localisation in potential fluctuations wells due to the randomly distributed charges at the semiconductor-insulator interface in MIS-structures. Paper presented at NATO ASI Fabrication, Properties and Applications of Low-Dimensional Semiconductors, Sozopol, Bulgaria.
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