Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene

Jonas Heidler; Sheng Yang; Xinliang Feng; Klaus Müllen; Kamal Asadi

doi:10.1016/j.sse.2018.03.008

Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene

Jonas Heidler, Sheng Yang, Xinliang Feng, Klaus Müllen, Kamal Asadi

Department of Physics

Research output: Contribution to journal › Article › peer-review

17 Citations (SciVal)

Abstract

Memories based on graphene that could be mass produced using low-cost methods have not yet received much attention. Here we demonstrate graphene ferroelectric (dual-gate) field effect transistors. The graphene has been obtained using electrochemical exfoliation of graphite. Field-effect transistors are realized using a monolayer of graphene flakes deposited by the Langmuir-Blodgett protocol. Ferroelectric field effect transistor memories are realized using a random ferroelectric copolymer poly(vinylidenefluoride-co-trifluoroethylene) in a top gated geometry. The memory transistors reveal ambipolar behaviour with both electron and hole accumulation channels. We show that the non-ferroelectric bottom gate can be advantageously used to tune the on/off ratio.

Original language	English
Pages (from-to)	90-94
Number of pages	5
Journal	Solid-State Electronics
Volume	144
DOIs	https://doi.org/10.1016/j.sse.2018.03.008
Publication status	Published - Jun 2018

Funding

K.A. acknowledges Alexander von Humboldt Foundation for the funding provided in the framework of the Sofja Kovalevskaja Award.

Keywords

Electrochemically exfoliated graphene
Ferroelectric
Field-effect transistor
Graphene
Memory

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2018.03.008

Cite this

@article{7740797523eb445fbb655520e8881d5c,

title = "Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene",

abstract = "Memories based on graphene that could be mass produced using low-cost methods have not yet received much attention. Here we demonstrate graphene ferroelectric (dual-gate) field effect transistors. The graphene has been obtained using electrochemical exfoliation of graphite. Field-effect transistors are realized using a monolayer of graphene flakes deposited by the Langmuir-Blodgett protocol. Ferroelectric field effect transistor memories are realized using a random ferroelectric copolymer poly(vinylidenefluoride-co-trifluoroethylene) in a top gated geometry. The memory transistors reveal ambipolar behaviour with both electron and hole accumulation channels. We show that the non-ferroelectric bottom gate can be advantageously used to tune the on/off ratio.",

keywords = "Electrochemically exfoliated graphene, Ferroelectric, Field-effect transistor, Graphene, Memory",

author = "Jonas Heidler and Sheng Yang and Xinliang Feng and Klaus M{\"u}llen and Kamal Asadi",

year = "2018",

month = jun,

doi = "10.1016/j.sse.2018.03.008",

language = "English",

volume = "144",

pages = "90--94",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier",

}

TY - JOUR

T1 - Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene

AU - Heidler, Jonas

AU - Yang, Sheng

AU - Feng, Xinliang

AU - Müllen, Klaus

AU - Asadi, Kamal

PY - 2018/6

Y1 - 2018/6

N2 - Memories based on graphene that could be mass produced using low-cost methods have not yet received much attention. Here we demonstrate graphene ferroelectric (dual-gate) field effect transistors. The graphene has been obtained using electrochemical exfoliation of graphite. Field-effect transistors are realized using a monolayer of graphene flakes deposited by the Langmuir-Blodgett protocol. Ferroelectric field effect transistor memories are realized using a random ferroelectric copolymer poly(vinylidenefluoride-co-trifluoroethylene) in a top gated geometry. The memory transistors reveal ambipolar behaviour with both electron and hole accumulation channels. We show that the non-ferroelectric bottom gate can be advantageously used to tune the on/off ratio.

AB - Memories based on graphene that could be mass produced using low-cost methods have not yet received much attention. Here we demonstrate graphene ferroelectric (dual-gate) field effect transistors. The graphene has been obtained using electrochemical exfoliation of graphite. Field-effect transistors are realized using a monolayer of graphene flakes deposited by the Langmuir-Blodgett protocol. Ferroelectric field effect transistor memories are realized using a random ferroelectric copolymer poly(vinylidenefluoride-co-trifluoroethylene) in a top gated geometry. The memory transistors reveal ambipolar behaviour with both electron and hole accumulation channels. We show that the non-ferroelectric bottom gate can be advantageously used to tune the on/off ratio.

KW - Electrochemically exfoliated graphene

KW - Ferroelectric

KW - Field-effect transistor

KW - Graphene

KW - Memory

UR - https://www.scopus.com/pages/publications/85045200385

U2 - 10.1016/j.sse.2018.03.008

DO - 10.1016/j.sse.2018.03.008

M3 - Article

AN - SCOPUS:85045200385

SN - 0038-1101

VL - 144

SP - 90

EP - 94

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene

Abstract

Funding

Keywords

ASJC Scopus subject areas

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