Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene

Jonas Heidler, Sheng Yang, Xinliang Feng, Klaus Müllen, Kamal Asadi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Memories based on graphene that could be mass produced using low-cost methods have not yet received much attention. Here we demonstrate graphene ferroelectric (dual-gate) field effect transistors. The graphene has been obtained using electrochemical exfoliation of graphite. Field-effect transistors are realized using a monolayer of graphene flakes deposited by the Langmuir-Blodgett protocol. Ferroelectric field effect transistor memories are realized using a random ferroelectric copolymer poly(vinylidenefluoride-co-trifluoroethylene) in a top gated geometry. The memory transistors reveal ambipolar behaviour with both electron and hole accumulation channels. We show that the non-ferroelectric bottom gate can be advantageously used to tune the on/off ratio.

Original languageEnglish
Pages (from-to)90-94
Number of pages5
JournalSolid-State Electronics
Volume144
DOIs
Publication statusPublished - Jun 2018

Keywords

  • Electrochemically exfoliated graphene
  • Ferroelectric
  • Field-effect transistor
  • Graphene
  • Memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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