Ferroelectric-carbon nanotube memory devices

Ashok Kumar, Sai G. Shivareddy, Margarita Correa, Oscar Resto, Youngjin Choi, Matthew Cole, Ram S. Katiyar, James F. Scott, Gehan A.J. Amaratunga, Haidong Lu, Alexei Gruverman

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

One-dimensional ferroelectric nanostructures, carbon nanotubes (CNT) and CNTinorganic oxides have recently been studied due to their potential applications for microelectronics. Here, we report coating of a registered array of aligned multi-wall carbon nanotubes (MWCNT) grown on silicon substrates by functional ferroelectric Pb(Zr,Ti)O 3 (PZT) which produces structures suitable for commercial prototype memories. Microstructural analysis reveals the crystalline nature of PZT with small nanocrystals aligned in different directions. First-order Raman modes of MWCNT and PZT/MWCNT/n-Si show the high structural quality of CNT before and after PZT deposition at elevated temperature. PZT exists mostly in the monoclinic Cc/Cm phase, which is the origin of the high piezoelectric response in the system. Lowloss square piezoelectric hysteresis obtained for the 3D bottom-up structure confirms the switchability of the device. Currentvoltage mapping of the device by conducting atomic force microscopy (c-AFM) indicates very low transient current. Fabrication and functional properties of these hybrid ferroelectriccarbon nanotubes is the first step towards miniaturization for future nanotechnology sensors, actuators, transducers and memory devices.

Original languageEnglish
Article number165702
JournalNanotechnology
Volume23
Issue number16
DOIs
Publication statusPublished - 27 Apr 2012

Fingerprint

Carbon Nanotubes
Ferroelectric materials
Carbon nanotubes
Data storage equipment
Silicon
Nanotechnology
Microelectronics
Nanocrystals
Oxides
Nanotubes
Hysteresis
Transducers
Atomic force microscopy
Nanostructures
Actuators
Crystalline materials
Fabrication
Coatings
Sensors
Substrates

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

Kumar, A., Shivareddy, S. G., Correa, M., Resto, O., Choi, Y., Cole, M., ... Gruverman, A. (2012). Ferroelectric-carbon nanotube memory devices. Nanotechnology, 23(16), [165702]. https://doi.org/10.1088/0957-4484/23/16/165702

Ferroelectric-carbon nanotube memory devices. / Kumar, Ashok; Shivareddy, Sai G.; Correa, Margarita; Resto, Oscar; Choi, Youngjin; Cole, Matthew; Katiyar, Ram S.; Scott, James F.; Amaratunga, Gehan A.J.; Lu, Haidong; Gruverman, Alexei.

In: Nanotechnology, Vol. 23, No. 16, 165702, 27.04.2012.

Research output: Contribution to journalArticle

Kumar, A, Shivareddy, SG, Correa, M, Resto, O, Choi, Y, Cole, M, Katiyar, RS, Scott, JF, Amaratunga, GAJ, Lu, H & Gruverman, A 2012, 'Ferroelectric-carbon nanotube memory devices', Nanotechnology, vol. 23, no. 16, 165702. https://doi.org/10.1088/0957-4484/23/16/165702
Kumar A, Shivareddy SG, Correa M, Resto O, Choi Y, Cole M et al. Ferroelectric-carbon nanotube memory devices. Nanotechnology. 2012 Apr 27;23(16). 165702. https://doi.org/10.1088/0957-4484/23/16/165702
Kumar, Ashok ; Shivareddy, Sai G. ; Correa, Margarita ; Resto, Oscar ; Choi, Youngjin ; Cole, Matthew ; Katiyar, Ram S. ; Scott, James F. ; Amaratunga, Gehan A.J. ; Lu, Haidong ; Gruverman, Alexei. / Ferroelectric-carbon nanotube memory devices. In: Nanotechnology. 2012 ; Vol. 23, No. 16.
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