Ferroelectric-carbon nanotube memory devices

Ashok Kumar, Sai G. Shivareddy, Margarita Correa, Oscar Resto, Youngjin Choi, Matthew Cole, Ram S. Katiyar, James F. Scott, Gehan A.J. Amaratunga, Haidong Lu, Alexei Gruverman

Research output: Contribution to journalArticlepeer-review

23 Citations (SciVal)


One-dimensional ferroelectric nanostructures, carbon nanotubes (CNT) and CNTinorganic oxides have recently been studied due to their potential applications for microelectronics. Here, we report coating of a registered array of aligned multi-wall carbon nanotubes (MWCNT) grown on silicon substrates by functional ferroelectric Pb(Zr,Ti)O 3 (PZT) which produces structures suitable for commercial prototype memories. Microstructural analysis reveals the crystalline nature of PZT with small nanocrystals aligned in different directions. First-order Raman modes of MWCNT and PZT/MWCNT/n-Si show the high structural quality of CNT before and after PZT deposition at elevated temperature. PZT exists mostly in the monoclinic Cc/Cm phase, which is the origin of the high piezoelectric response in the system. Lowloss square piezoelectric hysteresis obtained for the 3D bottom-up structure confirms the switchability of the device. Currentvoltage mapping of the device by conducting atomic force microscopy (c-AFM) indicates very low transient current. Fabrication and functional properties of these hybrid ferroelectriccarbon nanotubes is the first step towards miniaturization for future nanotechnology sensors, actuators, transducers and memory devices.

Original languageEnglish
Article number165702
Issue number16
Publication statusPublished - 27 Apr 2012

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • General Materials Science


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