FDTD modelling of IDG structures

V. Stoiljkovic, S. R. Pennock, P. R. Shepherd

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A three-dimensional Finite-Difference Time-Domain (FDTD) technique is applied to characterise deep slot and shallow slot inset dielectric guide (IDG), and the rectangular waveguide to IDG transition. Characteristic impedance of an IDG is defined and calculations presented for the first time and it is then used to determine S-parameters of the transition. The described method utilises pulsed excitation so that wideband results are available from a single FDTD computation. A graded mesh is used for computational efficiency. Comparisons are made between experimental and theoretical results and good agreement is found.

Original languageEnglish
Title of host publication1995 25th European Microwave Conference
PublisherIEEE
Pages751-754
Number of pages4
ISBN (Electronic)9780000000002
DOIs
Publication statusPublished - 1 Jan 1995
Event25th European Microwave Conference, EuMC 1995 - Bologna, Italy
Duration: 4 Sep 1995 → …

Publication series

Name1995 25th European Microwave Conference
Volume2

Conference

Conference25th European Microwave Conference, EuMC 1995
Country/TerritoryItaly
CityBologna
Period4/09/95 → …

ASJC Scopus subject areas

  • Instrumentation
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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