Fast electrochemical triple-interface processes at boron-doped diamond electrodes

F Marken, R G Compton, C H Goeting, J S Foord, S D Bull, S G Davies

Research output: Contribution to journal › Article › peer-review

23 Citations (SciVal)

Original language	English
Pages (from-to)	88-93
Number of pages	6
Journal	Journal of Solid State Electrochemistry
Volume	5
Issue number	2
Publication status	Published - 2001

ID number: ISI:000167348500002

Cite this

@article{9a2dd3679a9147829d5bab13689d4d03,

title = "Fast electrochemical triple-interface processes at boron-doped diamond electrodes",

author = "F Marken and Compton, {R G} and Goeting, {C H} and Foord, {J S} and Bull, {S D} and Davies, {S G}",

note = "ID number: ISI:000167348500002",

year = "2001",

language = "English",

volume = "5",

pages = "88--93",

journal = "Journal of Solid State Electrochemistry",

issn = "1432-8488",

publisher = "Springer Verlag",

number = "2",

}

TY - JOUR

T1 - Fast electrochemical triple-interface processes at boron-doped diamond electrodes

AU - Marken, F

AU - Compton, R G

AU - Goeting, C H

AU - Foord, J S

AU - Bull, S D

AU - Davies, S G

N1 - ID number: ISI:000167348500002

PY - 2001

Y1 - 2001

M3 - Article

SN - 1432-8488

VL - 5

SP - 88

EP - 93

JO - Journal of Solid State Electrochemistry

JF - Journal of Solid State Electrochemistry

IS - 2

ER -