TY - JOUR
T1 - Far infrared modulated photoluminescence in InSb quantum dots
AU - Child, R.A.
AU - Nicholas, R.J.
AU - Mason, N.J.
AU - Shields, P.
AU - Wells, J.-P.R.
AU - Bradley, I.V.
AU - Phillips, J.
AU - Murdin, B.N.
PY - 2004
Y1 - 2004
N2 - The first FIRM-PL measurements in InSb/GaSb quantum dots have been performed. At low power densities the FIR absorption causes a transfer of carriers between dots and effectively cools the system, preferentially populating large, low energy dots and increasing the photoluminescence (PL) intensity. At higher powers the carrier temperature increases and the PL intensity falls. The spectral dependence of the FIRM-PL signal measures the energy spectrum of the quantum dots, showing a peak at 14.5 meV corresponding to transitions between the first two energy levels of the quantum dot distribution.
AB - The first FIRM-PL measurements in InSb/GaSb quantum dots have been performed. At low power densities the FIR absorption causes a transfer of carriers between dots and effectively cools the system, preferentially populating large, low energy dots and increasing the photoluminescence (PL) intensity. At higher powers the carrier temperature increases and the PL intensity falls. The spectral dependence of the FIRM-PL signal measures the energy spectrum of the quantum dots, showing a peak at 14.5 meV corresponding to transitions between the first two energy levels of the quantum dot distribution.
UR - http://dx.doi.org/10.1016/j.physe.2003.12.079
U2 - 10.1016/j.physe.2003.12.079
DO - 10.1016/j.physe.2003.12.079
M3 - Article
VL - 22
SP - 598
EP - 602
JO - Physica E: Low-dimensional Systems and Nanostructures
JF - Physica E: Low-dimensional Systems and Nanostructures
IS - 1-3
ER -