Far infrared modulated photoluminescence in InSb quantum dots

R.A. Child, R.J. Nicholas, N.J. Mason, P. Shields, J.-P.R. Wells, I.V. Bradley, J. Phillips, B.N. Murdin

Research output: Contribution to journalArticle

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Abstract

The first FIRM-PL measurements in InSb/GaSb quantum dots have been performed. At low power densities the FIR absorption causes a transfer of carriers between dots and effectively cools the system, preferentially populating large, low energy dots and increasing the photoluminescence (PL) intensity. At higher powers the carrier temperature increases and the PL intensity falls. The spectral dependence of the FIRM-PL signal measures the energy spectrum of the quantum dots, showing a peak at 14.5 meV corresponding to transitions between the first two energy levels of the quantum dot distribution.
Original languageEnglish
Pages (from-to)598-602
Number of pages5
JournalPhysica E: Low-dimensional Systems and Nanostructures
Volume22
Issue number1-3
DOIs
Publication statusPublished - 2004

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    Child, R. A., Nicholas, R. J., Mason, N. J., Shields, P., Wells, J-PR., Bradley, I. V., Phillips, J., & Murdin, B. N. (2004). Far infrared modulated photoluminescence in InSb quantum dots. Physica E: Low-dimensional Systems and Nanostructures, 22(1-3), 598-602. https://doi.org/10.1016/j.physe.2003.12.079