Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays

E. D. Le Boulbar, Ionut Girgel, C. J. Lewins, P. R. Edwards, R. W. Martin, A. Šatka, D. W. E. Allsopp, P. A. Shields

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Abstract

The use of etched nanorods from a planar template as a growth scaffold for a highly regular GaN/InGaN/GaN core-shell structure is demonstrated. The recovery of m-plane non-polar facets from etched high-aspect-ratio GaN nanorods is studied with and without the introduction of a hydrogen silsesquioxane passivation layer at the bottom of the etched nanorod arrays. This layer successfully prevented c-plane growth between the nanorods, resulting in vertical nanorod sidewalls (∼89.8°) and a more regular height distribution than re-growth on unpassivated nanorods. The height variation on passivated nanorods is solely determined by the uniformity of nanorod diameter, which degrades with increased growth duration. Facet-dependent indium incorporation of GaN/InGaN/GaN core-shell layers regrown onto the etched nanorods is observed by high-resolution cathodoluminescence imaging. Sharp features corresponding to diffracted wave-guide modes in angle-resolved photoluminescence measurements are evidence of the uniformity of the full core-shell structure grown on ordered etched nanorods.
Original languageEnglish
Article number094302
JournalJournal of Applied Physics
Volume114
Issue number9
Early online date3 Sep 2013
DOIs
Publication statusPublished - 3 Sep 2013

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    Lighting the Future

    Allsopp, D. & Shields, P.

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