13 Citations (Scopus)
112 Downloads (Pure)
Original languageEnglish
Pages (from-to)132-136
JournalMicroelectronic Engineering
Volume153
Issue number5
DOIs
Publication statusPublished - 5 Mar 2016

Cite this

Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices. / Le Boulbar, Emmanuel; Lewins, Christopher; Allsopp, Duncan; Bowen, Christopher; Shields, Philip.

In: Microelectronic Engineering, Vol. 153, No. 5, 05.03.2016, p. 132-136.

Research output: Contribution to journalArticle

Le Boulbar, Emmanuel ; Lewins, Christopher ; Allsopp, Duncan ; Bowen, Christopher ; Shields, Philip. / Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices. In: Microelectronic Engineering. 2016 ; Vol. 153, No. 5. pp. 132-136.
@article{2e443648058e42029639a0c4eacbf6ae,
title = "Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices",
author = "{Le Boulbar}, Emmanuel and Christopher Lewins and Duncan Allsopp and Christopher Bowen and Philip Shields",
year = "2016",
month = "3",
day = "5",
doi = "10.1016/j.mee.2016.03.058",
language = "English",
volume = "153",
pages = "132--136",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "5",

}

TY - JOUR

T1 - Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices

AU - Le Boulbar, Emmanuel

AU - Lewins, Christopher

AU - Allsopp, Duncan

AU - Bowen, Christopher

AU - Shields, Philip

PY - 2016/3/5

Y1 - 2016/3/5

UR - http://dx.doi.org/10.1016/j.mee.2016.03.058

UR - http://dx.doi.org/10.1016/j.mee.2016.03.058

U2 - 10.1016/j.mee.2016.03.058

DO - 10.1016/j.mee.2016.03.058

M3 - Article

VL - 153

SP - 132

EP - 136

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 5

ER -