Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices

Emmanuel Le Boulbar; Christopher Lewins; Duncan Allsopp; Christopher Bowen; Philip Shields

doi:10.1016/j.mee.2016.03.058

Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices

Emmanuel Le Boulbar, Christopher Lewins, Duncan Allsopp, Christopher Bowen, Philip Shields

Research output: Contribution to journal › Article

12 Citations (Scopus)

96 Downloads (Pure)

Original language	English
Pages (from-to)	132-136
Journal	Microelectronic Engineering
Volume	153
Issue number	5
DOIs	https://doi.org/10.1016/j.mee.2016.03.058
Publication status	Published - 5 Mar 2016

Cite this

Le Boulbar, E., Lewins, C., Allsopp, D., Bowen, C., & Shields, P. (2016). Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices. Microelectronic Engineering, 153(5), 132-136. https://doi.org/10.1016/j.mee.2016.03.058

Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices. / Le Boulbar, Emmanuel; Lewins, Christopher; Allsopp, Duncan; Bowen, Christopher ; Shields, Philip.

In: Microelectronic Engineering, Vol. 153, No. 5, 05.03.2016, p. 132-136.

Research output: Contribution to journal › Article

Le Boulbar, E, Lewins, C, Allsopp, D, Bowen, C & Shields, P 2016, 'Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices', Microelectronic Engineering, vol. 153, no. 5, pp. 132-136. https://doi.org/10.1016/j.mee.2016.03.058

Le Boulbar E, Lewins C, Allsopp D, Bowen C , Shields P. Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices. Microelectronic Engineering. 2016 Mar 5;153(5):132-136. https://doi.org/10.1016/j.mee.2016.03.058

Le Boulbar, Emmanuel ; Lewins, Christopher ; Allsopp, Duncan ; Bowen, Christopher ; Shields, Philip. / Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices. In: Microelectronic Engineering. 2016 ; Vol. 153, No. 5. pp. 132-136.

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AU - Shields, Philip

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Access to Document

10.1016/j.mee.2016.03.058

1-s2.0-S0167931716301770-mainFinal published version, 1 MBLicence: CC BY

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