Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices

Emmanuel Le Boulbar; Christopher Lewins; Duncan Allsopp; Christopher Bowen; Philip Shields

doi:10.1016/j.mee.2016.03.058

Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices

Emmanuel Le Boulbar, Christopher Lewins, Duncan Allsopp, Christopher Bowen, Philip Shields

Research output: Contribution to journal › Article › peer-review

32 Citations (SciVal)

258 Downloads (Pure)

Original language	English
Pages (from-to)	132-136
Journal	Microelectronic Engineering
Volume	153
Issue number	5
DOIs	https://doi.org/10.1016/j.mee.2016.03.058
Publication status	Published - 5 Mar 2016

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10.1016/j.mee.2016.03.058

1-s2.0-S0167931716301770-mainFinal published version, 1.29 MBLicence: CC BY

Cite this

@article{2e443648058e42029639a0c4eacbf6ae,

title = "Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices",

author = "{Le Boulbar}, Emmanuel and Christopher Lewins and Duncan Allsopp and Christopher Bowen and Philip Shields",

year = "2016",

month = mar,

day = "5",

doi = "10.1016/j.mee.2016.03.058",

language = "English",

volume = "153",

pages = "132--136",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "5",

}

TY - JOUR

T1 - Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices

AU - Le Boulbar, Emmanuel

AU - Lewins, Christopher

AU - Allsopp, Duncan

AU - Bowen, Christopher

AU - Shields, Philip

PY - 2016/3/5

Y1 - 2016/3/5

UR - http://dx.doi.org/10.1016/j.mee.2016.03.058

U2 - 10.1016/j.mee.2016.03.058

DO - 10.1016/j.mee.2016.03.058

M3 - Article

SN - 0167-9317

VL - 153

SP - 132

EP - 136

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 5

ER -

Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices

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Other files and links

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