Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices

Emmanuel Le Boulbar; Christopher Lewins; Duncan Allsopp; Christopher Bowen; Philip Shields

doi:10.1016/j.mee.2016.03.058

Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices

Emmanuel Le Boulbar, Christopher Lewins, Duncan Allsopp, Christopher Bowen, Philip Shields

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

193 Downloads (Pure)

Original language	English
Pages (from-to)	132-136
Journal	Microelectronic Engineering
Volume	153
Issue number	5
DOIs	https://doi.org/10.1016/j.mee.2016.03.058
Publication status	Published - 5 Mar 2016

Access to Document

10.1016/j.mee.2016.03.058

1-s2.0-S0167931716301770-mainFinal published version, 1.29 MBLicence: CC BY

1 Active
2 Finished

Manufacturing of Nano-Engineered III-N Semiconductors
Shields, P., Allsopp, D. & Wang, W.
Engineering and Physical Sciences Research Council
1/05/15 → 30/09/21
Project: Research council
NEMESIS:Novel Energy Materials: Engineering Science and Integrated Systems
Bowen, C.
European Research Council
1/02/13 → 31/12/18
Project: EU Commission
Lighting the Future
Allsopp, D. & Shields, P.
Engineering and Physical Sciences Research Council
1/12/10 → 30/11/15
Project: Research council

Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices
Le Boulbar, E. (Creator), Shields, P. (Researcher), Allsopp, D. (Researcher), Bowen, C. (Researcher), Lewins, C. (Data Collector), Lewins, C. (Creator), Allsopp, D. (Creator), Bowen, C. (Creator) & Shields, P. (Creator), University of Bath, Apr 2016
DOI: 10.15125/BATH-00154
Dataset

MC2-Electron Microscopy (EM)
Material and Chemical Characterisation (MC2)
Facility/equipment: Technology type

Cite this

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title = "Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices",

author = "{Le Boulbar}, Emmanuel and Christopher Lewins and Duncan Allsopp and Christopher Bowen and Philip Shields",

year = "2016",

month = mar,

day = "5",

doi = "10.1016/j.mee.2016.03.058",

language = "English",

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pages = "132--136",

journal = "Microelectronic Engineering",

issn = "0167-9317",

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T1 - Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices

AU - Le Boulbar, Emmanuel

AU - Lewins, Christopher

AU - Allsopp, Duncan

AU - Bowen, Christopher

AU - Shields, Philip

PY - 2016/3/5

Y1 - 2016/3/5

UR - http://dx.doi.org/10.1016/j.mee.2016.03.058

U2 - 10.1016/j.mee.2016.03.058

DO - 10.1016/j.mee.2016.03.058

M3 - Article

VL - 153

SP - 132

EP - 136

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 5

ER -

Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices

Access to Document

Manufacturing of Nano-Engineered III-N Semiconductors

NEMESIS:Novel Energy Materials: Engineering Science and Integrated Systems

Lighting the Future

Chris Bowen

Philip Shields

Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices

MC2-Electron Microscopy (EM)

Cite this