| Original language | English |
|---|---|
| Pages (from-to) | 132-136 |
| Journal | Microelectronic Engineering |
| Volume | 153 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 5 Mar 2016 |
Cite this
Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices. / Le Boulbar, Emmanuel; Lewins, Christopher; Allsopp, Duncan; Bowen, Christopher; Shields, Philip.
In: Microelectronic Engineering, Vol. 153, No. 5, 05.03.2016, p. 132-136.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices
AU - Le Boulbar, Emmanuel
AU - Lewins, Christopher
AU - Allsopp, Duncan
AU - Bowen, Christopher
AU - Shields, Philip
PY - 2016/3/5
Y1 - 2016/3/5
UR - http://dx.doi.org/10.1016/j.mee.2016.03.058
UR - http://dx.doi.org/10.1016/j.mee.2016.03.058
U2 - 10.1016/j.mee.2016.03.058
DO - 10.1016/j.mee.2016.03.058
M3 - Article
VL - 153
SP - 132
EP - 136
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 5
ER -