Fabrication of 2×2 crosspoint switches using a sputtered SiO2 intermixing technique

B. C. Qiu, Y. H. Qian, O. P. Kowalski, A. C. Bryce, J. S. Aitchison, R. M. De La Rue, J. H. Marsh, M. Owen, I. H. White, R. V. Penty, A. Franzen, D. K. Hunter, I. Andonovic

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A 2×2 crosspoint switch was fabricated using a single stage of epitaxy and quantum-well intermixing integration technology. A modulation depth of 25 dB was obtained for the operation wavelength of 1.55 μm, indicating that the sputtered SiO2 process did not produce any dramatic degradation in the performance of the multiple quantum well structure as an electroabsorption modulator. The insertion losses were estimated to be around 10 dB. The fabrication process can easily allow the inclusion of amplifiers to compensate for the losses in the switch, as well as the coupling loss between optical fibers and the switch.

Original languageEnglish
Pages (from-to)287-289
Number of pages3
JournalIEEE Photonics Technology Letters
Volume12
Issue number3
DOIs
Publication statusPublished - 1 Mar 2000

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Atomic and Molecular Physics, and Optics

Cite this

Qiu, B. C., Qian, Y. H., Kowalski, O. P., Bryce, A. C., Aitchison, J. S., De La Rue, R. M., ... Andonovic, I. (2000). Fabrication of 2×2 crosspoint switches using a sputtered SiO2 intermixing technique. IEEE Photonics Technology Letters, 12(3), 287-289. https://doi.org/10.1109/68.826916