Fabrication of 2×2 crosspoint switches using a sputtered SiO2 intermixing technique

B. C. Qiu; Y. H. Qian; O. P. Kowalski; A. C. Bryce; J. S. Aitchison; R. M. De La Rue; J. H. Marsh; M. Owen; I. H. White; R. V. Penty; A. Franzen; D. K. Hunter; I. Andonovic

doi:10.1109/68.826916

Fabrication of 2×2 crosspoint switches using a sputtered SiO2 intermixing technique

B. C. Qiu, Y. H. Qian, O. P. Kowalski, A. C. Bryce, J. S. Aitchison, R. M. De La Rue, J. H. Marsh, M. Owen, I. H. White, R. V. Penty, A. Franzen, D. K. Hunter, I. Andonovic

Research output: Contribution to journal › Article › peer-review

10 Citations (SciVal)

Abstract

A 2×2 crosspoint switch was fabricated using a single stage of epitaxy and quantum-well intermixing integration technology. A modulation depth of 25 dB was obtained for the operation wavelength of 1.55 μm, indicating that the sputtered SiO₂ process did not produce any dramatic degradation in the performance of the multiple quantum well structure as an electroabsorption modulator. The insertion losses were estimated to be around 10 dB. The fabrication process can easily allow the inclusion of amplifiers to compensate for the losses in the switch, as well as the coupling loss between optical fibers and the switch.

Original language	English
Pages (from-to)	287-289
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	12
Issue number	3
DOIs	https://doi.org/10.1109/68.826916
Publication status	Published - 1 Mar 2000

ASJC Scopus subject areas

Electrical and Electronic Engineering
Physics and Astronomy (miscellaneous)
Atomic and Molecular Physics, and Optics

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10.1109/68.826916

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title = "Fabrication of 2×2 crosspoint switches using a sputtered SiO2 intermixing technique",

abstract = "A 2×2 crosspoint switch was fabricated using a single stage of epitaxy and quantum-well intermixing integration technology. A modulation depth of 25 dB was obtained for the operation wavelength of 1.55 μm, indicating that the sputtered SiO2 process did not produce any dramatic degradation in the performance of the multiple quantum well structure as an electroabsorption modulator. The insertion losses were estimated to be around 10 dB. The fabrication process can easily allow the inclusion of amplifiers to compensate for the losses in the switch, as well as the coupling loss between optical fibers and the switch.",

author = "Qiu, {B. C.} and Qian, {Y. H.} and Kowalski, {O. P.} and Bryce, {A. C.} and Aitchison, {J. S.} and {De La Rue}, {R. M.} and Marsh, {J. H.} and M. Owen and White, {I. H.} and Penty, {R. V.} and A. Franzen and Hunter, {D. K.} and I. Andonovic",

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AU - Qiu, B. C.

AU - Qian, Y. H.

AU - Kowalski, O. P.

AU - Bryce, A. C.

AU - Aitchison, J. S.

AU - De La Rue, R. M.

AU - Marsh, J. H.

AU - Owen, M.

AU - White, I. H.

AU - Penty, R. V.

AU - Franzen, A.

AU - Hunter, D. K.

AU - Andonovic, I.

PY - 2000/3/1

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N2 - A 2×2 crosspoint switch was fabricated using a single stage of epitaxy and quantum-well intermixing integration technology. A modulation depth of 25 dB was obtained for the operation wavelength of 1.55 μm, indicating that the sputtered SiO2 process did not produce any dramatic degradation in the performance of the multiple quantum well structure as an electroabsorption modulator. The insertion losses were estimated to be around 10 dB. The fabrication process can easily allow the inclusion of amplifiers to compensate for the losses in the switch, as well as the coupling loss between optical fibers and the switch.

AB - A 2×2 crosspoint switch was fabricated using a single stage of epitaxy and quantum-well intermixing integration technology. A modulation depth of 25 dB was obtained for the operation wavelength of 1.55 μm, indicating that the sputtered SiO2 process did not produce any dramatic degradation in the performance of the multiple quantum well structure as an electroabsorption modulator. The insertion losses were estimated to be around 10 dB. The fabrication process can easily allow the inclusion of amplifiers to compensate for the losses in the switch, as well as the coupling loss between optical fibers and the switch.

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Fabrication of 2×2 crosspoint switches using a sputtered SiO2 intermixing technique

Abstract

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