Abstract
Gallium nitride nanorod arrays have been created via dry etching in Cl2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers.
| Original language | English |
|---|---|
| Pages (from-to) | 631-634 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 9 |
| Issue number | 3-4 |
| DOIs | |
| Publication status | Published - Mar 2012 |
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