Fabrication and properties of etched GaN nanorods

Philip Shields, Maxime Hugues, Jesus Zúñiga-Pérez, Mike Cooke, Mark Dineen, Wang Wang, Federica Causa, Duncan Allsopp

Research output: Contribution to journalArticlepeer-review

30 Citations (SciVal)


Gallium nitride nanorod arrays have been created via dry etching in Cl2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers.
Original languageEnglish
Pages (from-to)631-634
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number3-4
Publication statusPublished - Mar 2012


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