Fabrication and properties of etched GaN nanorods

Philip Shields; Maxime Hugues; Jesus Zúñiga-Pérez; Mike Cooke; Mark Dineen; Wang Wang; Federica Causa; Duncan Allsopp

doi:10.1002/pssc.201100394

Fabrication and properties of etched GaN nanorods

Philip Shields, Maxime Hugues, Jesus Zúñiga-Pérez, Mike Cooke, Mark Dineen, Wang Wang, Federica Causa, Duncan Allsopp

Department of Electronic & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Gallium nitride nanorod arrays have been created via dry etching in Cl2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers.

Original language	English
Pages (from-to)	631-634
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	9
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.201100394
Publication status	Published - Mar 2012

Access to Document

10.1002/pssc.201100394

Fingerprint Dive into the research topics of 'Fabrication and properties of etched GaN nanorods'. Together they form a unique fingerprint.

Cite this

@article{3852d0ac347b4471987531500ae850a7,

title = "Fabrication and properties of etched GaN nanorods",

abstract = "Gallium nitride nanorod arrays have been created via dry etching in Cl2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers.",

author = "Philip Shields and Maxime Hugues and Jesus Z{\'u}{\~n}iga-P{\'e}rez and Mike Cooke and Mark Dineen and Wang Wang and Federica Causa and Duncan Allsopp",

year = "2012",

month = mar,

doi = "10.1002/pssc.201100394",

language = "English",

volume = "9",

pages = "631--634",

journal = "Physica Status Solidi (C)",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "3-4",

}

TY - JOUR

T1 - Fabrication and properties of etched GaN nanorods

AU - Shields, Philip

AU - Hugues, Maxime

AU - Zúñiga-Pérez, Jesus

AU - Cooke, Mike

AU - Dineen, Mark

AU - Wang, Wang

AU - Causa, Federica

AU - Allsopp, Duncan

PY - 2012/3

Y1 - 2012/3

N2 - Gallium nitride nanorod arrays have been created via dry etching in Cl2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers.

AB - Gallium nitride nanorod arrays have been created via dry etching in Cl2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers.

UR - http://www.scopus.com/inward/record.url?scp=84863366739&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1002/pssc.201100394

U2 - 10.1002/pssc.201100394

DO - 10.1002/pssc.201100394

M3 - Article

VL - 9

SP - 631

EP - 634

JO - Physica Status Solidi (C)

JF - Physica Status Solidi (C)

SN - 1610-1634

IS - 3-4

ER -