TY - JOUR
T1 - Fabrication and properties of etched GaN nanorods
AU - Shields, Philip
AU - Hugues, Maxime
AU - Zúñiga-Pérez, Jesus
AU - Cooke, Mike
AU - Dineen, Mark
AU - Wang, Wang
AU - Causa, Federica
AU - Allsopp, Duncan
PY - 2012/3
Y1 - 2012/3
N2 - Gallium nitride nanorod arrays have been created via dry etching in Cl2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers.
AB - Gallium nitride nanorod arrays have been created via dry etching in Cl2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers.
UR - http://www.scopus.com/inward/record.url?scp=84863366739&partnerID=8YFLogxK
UR - http://dx.doi.org/10.1002/pssc.201100394
U2 - 10.1002/pssc.201100394
DO - 10.1002/pssc.201100394
M3 - Article
VL - 9
SP - 631
EP - 634
JO - Physica Status Solidi (C)
JF - Physica Status Solidi (C)
SN - 1610-1634
IS - 3-4
ER -