A simple approach to fabricating ordered InGaN/GaN nanorod arrays light-emitting diodes (LEDs) with strongly directional light emission is reported. The far field radiation pattern of the nanorod arrays LEDs shows preferential emission in a ± 10° cone about the surface normal and contained other features arising from diffraction associated with the periodicity of the nanorod array. The output power per unit in-plane emissive area at 300-mA drive current is three times larger than that of an equivalent planar LED.
Zhuang, Y. D., Lewins, C. J., Lis, S., Shields, P. A., & Allsopp, D. W. E. (2013). Fabrication and characterization of light-emitting diodes comprising highly ordered arrays of emissive InGaN/GaN nanorods. IEEE Photonics Technology Letters, 25(11), 1047-1049. https://doi.org/10.1109/LPT.2013.2259807