Fabrication and characterization of light-emitting diodes comprising highly ordered arrays of emissive InGaN/GaN nanorods

Y.D. Zhuang, C.J. Lewins, S. Lis, P.A. Shields, D.W.E. Allsopp

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

A simple approach to fabricating ordered InGaN/GaN nanorod arrays light-emitting diodes (LEDs) with strongly directional light emission is reported. The far field radiation pattern of the nanorod arrays LEDs shows preferential emission in a ± 10° cone about the surface normal and contained other features arising from diffraction associated with the periodicity of the nanorod array. The output power per unit in-plane emissive area at 300-mA drive current is three times larger than that of an equivalent planar LED.
Original languageEnglish
Pages (from-to)1047-1049
Number of pages3
JournalIEEE Photonics Technology Letters
Volume25
Issue number11
Early online date30 Apr 2013
DOIs
Publication statusPublished - 1 Jun 2013

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Nanorods
nanorods
Light emitting diodes
light emitting diodes
Fabrication
fabrication
Light emission
light emission
far fields
Cones
periodic variations
cones
Diffraction
output
radiation
diffraction

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Fabrication and characterization of light-emitting diodes comprising highly ordered arrays of emissive InGaN/GaN nanorods. / Zhuang, Y.D.; Lewins, C.J.; Lis, S.; Shields, P.A.; Allsopp, D.W.E.

In: IEEE Photonics Technology Letters, Vol. 25, No. 11, 01.06.2013, p. 1047-1049.

Research output: Contribution to journalArticle

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