Experimental observation of spectral tuning in twin-segment double quantum well (dqw) aigaas diode laser

I. H. White; J. J.S. Watts; B. Garrett

doi:10.1049/el:19890638

Experimental observation of spectral tuning in twin-segment double quantum well (dqw) aigaas diode laser

I. H. White, J. J.S. Watts, B. Garrett

Vice Chancellor's Office

Research output: Contribution to journal › Article › peer-review

Abstract

Wavelength tuning of the spectral gain peak in an asymmetric twin segment DQW AIGaAs laser over 6 nm has been achieved by varying a reverse bias current to the shorter segment with high forward injection in the longer section. Tuning is attributed to bandgap narrowing at high charge concentrations, allowing the optical wavelength to hop across 70 consecutive modes.

Original language	English
Pages (from-to)	953-954
Number of pages	2
Journal	Electronics Letters
Volume	25
Issue number	15
DOIs	https://doi.org/10.1049/el:19890638
Publication status	Published - 6 Jul 1989

Keywords

LEDs
Optical communications
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19890638

Cite this

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title = "Experimental observation of spectral tuning in twin-segment double quantum well (dqw) aigaas diode laser",

abstract = "Wavelength tuning of the spectral gain peak in an asymmetric twin segment DQW AIGaAs laser over 6 nm has been achieved by varying a reverse bias current to the shorter segment with high forward injection in the longer section. Tuning is attributed to bandgap narrowing at high charge concentrations, allowing the optical wavelength to hop across 70 consecutive modes.",

keywords = "LEDs, Optical communications, Semiconductor lasers",

author = "White, {I. H.} and Watts, {J. J.S.} and B. Garrett",

year = "1989",

month = jul,

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doi = "10.1049/el:19890638",

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journal = "Electronics Letters",

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AU - White, I. H.

AU - Watts, J. J.S.

AU - Garrett, B.

PY - 1989/7/6

Y1 - 1989/7/6

N2 - Wavelength tuning of the spectral gain peak in an asymmetric twin segment DQW AIGaAs laser over 6 nm has been achieved by varying a reverse bias current to the shorter segment with high forward injection in the longer section. Tuning is attributed to bandgap narrowing at high charge concentrations, allowing the optical wavelength to hop across 70 consecutive modes.

AB - Wavelength tuning of the spectral gain peak in an asymmetric twin segment DQW AIGaAs laser over 6 nm has been achieved by varying a reverse bias current to the shorter segment with high forward injection in the longer section. Tuning is attributed to bandgap narrowing at high charge concentrations, allowing the optical wavelength to hop across 70 consecutive modes.

KW - LEDs

KW - Optical communications

KW - Semiconductor lasers

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DO - 10.1049/el:19890638

M3 - Article

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JO - Electronics Letters

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Experimental observation of spectral tuning in twin-segment double quantum well (dqw) aigaas diode laser

Abstract

Keywords

ASJC Scopus subject areas

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