TY - GEN
T1 - Exciton fine structure in organic-inorganic quantum well materials
AU - Ema, K.
AU - Umeda, K.
AU - Toda, M.
AU - Kunugita, H.
AU - Kuroe, H.
AU - Sekine, T.
AU - Wolverson, D.
AU - Davies, J. J.
PY - 2005/12/1
Y1 - 2005/12/1
N2 - Organic-inorganic quantum well materials, (CnH 2n+1NH3)2PbX4 (X=I, Br), form self-organized two-dimensional (2D) systems, where inorganic semiconductor well layers are sandwiched by organic barrier layers. Owing to strong quantum confinement and dielectric enhancement effect, ideal 2D-Wannier exciton exists in these materials [1]. It has been founded that the binding energies of the exciton (Eex) and the biexciton (Ebi) are extremely large (Eex ∼360meV and Ebi ∼40meV for (C 6H13NH3)2PbI4 [1], E ex ∼480meV and Ebi ∼60meV for (C4H 9NH3)2PbBr4 [2]), which are the largest values ever reported. Thanks to the large binding energies, these materials are quite suitable to investigate various properties of 2D-exciton system. In this study, we have investigated the fine structure of the excitons in (C6H13NH3)2PbI4and (C4H9NH3)2PbBr4 using photo-luminescence (PL) measurement under magnetic field and spin-flip Raman scattering (SFRS) measurement.
AB - Organic-inorganic quantum well materials, (CnH 2n+1NH3)2PbX4 (X=I, Br), form self-organized two-dimensional (2D) systems, where inorganic semiconductor well layers are sandwiched by organic barrier layers. Owing to strong quantum confinement and dielectric enhancement effect, ideal 2D-Wannier exciton exists in these materials [1]. It has been founded that the binding energies of the exciton (Eex) and the biexciton (Ebi) are extremely large (Eex ∼360meV and Ebi ∼40meV for (C 6H13NH3)2PbI4 [1], E ex ∼480meV and Ebi ∼60meV for (C4H 9NH3)2PbBr4 [2]), which are the largest values ever reported. Thanks to the large binding energies, these materials are quite suitable to investigate various properties of 2D-exciton system. In this study, we have investigated the fine structure of the excitons in (C6H13NH3)2PbI4and (C4H9NH3)2PbBr4 using photo-luminescence (PL) measurement under magnetic field and spin-flip Raman scattering (SFRS) measurement.
UR - http://www.scopus.com/inward/record.url?scp=33847319254&partnerID=8YFLogxK
U2 - 10.1109/EQEC.2005.1567516
DO - 10.1109/EQEC.2005.1567516
M3 - Chapter in a published conference proceeding
AN - SCOPUS:33847319254
SN - 0780389735
SN - 9780780389731
T3 - 2005 European Quantum Electronics Conference, EQEC '05
BT - 2005 European Quantum Electronics Conference, EQEC '05
T2 - 2005 European Quantum Electronics Conference, EQEC '05
Y2 - 12 June 2005 through 17 June 2005
ER -