Evidence of Surface Interlayer Dimerization in the Commensurate Charge Density Wave Phase of 1T-TaSe2

Niccolò Mignani, Alberto Crepaldi, Luca Moreschini, Aaron Bostwick, Chris Jozwiak, Eli Rotenberg, Simon Crampin, Enrico Da Como, Ettore Carpene

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Abstract

Van der Waals layered materials offer unprecedented opportunities to tune electronic properties by controlling, for instance, the number of layers or their mutual twist angle. However, the translational degree of freedom has not been given proportionate attention. Within the wide family of transition metal dichalcogenides, the commensurate charge density wave (CCDW) phase of 1T-TaSe2 is predicted to host several quantum states ranging from 1D metal to 3D insulator depending on the lateral stacking. By means of angle-resolved photoemission spectroscopy with micrometer spatial resolution, we studied the charge-ordered 1T-TaSe2, revealing the coexistence of metallic and insulating surface domains. Our investigation clarifies that metallicity is due to a specific lateral sliding of the CCDW layers, while insulating behavior is driven by surface interlayer dimerization. These results open intriguing potentialities in surface functionalization and control of electronic structure.

Original languageEnglish
Article number256203
Number of pages7
JournalPhysical Review Letters
Volume135
Issue number25
Early online date19 Dec 2025
DOIs
Publication statusPublished - 19 Dec 2025

Data Availability Statement

The data that support the findings of this article are not publicly available. The data are available from the authors upon reasonable request

ASJC Scopus subject areas

  • General Physics and Astronomy

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