Abstract
In the above paper [1], there was a minor error in the implementation of the transfer matrix method used to calculate the complex reflection coefficient (r_{mathrm {-}}) of the nanorod/GaN/sapphire trilayer. The formulas provided by Hecht [2] use the convention, where the phase of the electromagnetic fields is assumed to vary as e (^{mathrm {i}(omega tmathrm {-}beta z)}) as opposed to the convention used in the rest of the work where the phase varies as e (^{mathrm {i}(beta z mathrm {-}omega t )}) . While this inconsistency has affected the results reported in [1, Figs. 5–9], the authors believe the conclusions drawn from these data are unchanged.
| Original language | English |
|---|---|
| Pages (from-to) | 937-938 |
| Number of pages | 2 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 50 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Nov 2014 |
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