Erbium ion luminescence of silicon nanocrystal layers in a silicon dioxide matrix measured under strong optical excitation

V Y Timoshenko, O A Shalygina, M G Lisachenko, D M Zhigunov, S A Teterukov, P K Kashkarov, D Kovalev, M Zacharias, K Imakita, M Fujii

Research output: Contribution to journalArticle

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Abstract

The photoluminescence (PL) spectra and kinetics of erbium-doped layers of silicon nanocrystals dispersed in a silicon dioxide matrix (nc-Si/SiO2) are studied. It was found that optical excitation of nc-Si can be transferred with a high efficiency to Er3+ ions present in the surrounding oxide. The efficiency of energy transfer increases with increasing pumping photon energy and intensity. The process of Er3+ excitation is shown to compete successfully with nonradiative recombination in the nc-Si/SiO2 structures. The Er3+ PL lifetime was found to decrease under intense optical pumping, which implies the establishment of inverse population in the Er3+ system. The results obtained demonstrate the very high potential of erbium-doped nc-Si/SiO2 structures when used as active media for optical amplifiers and light-emitting devices operating at a wavelength of 1.5 mum. (C) 2005 Pleiades Publishing, Inc.
Original languageEnglish
Pages (from-to)121-124
Number of pages4
JournalPhysics of the Solid State
Volume47
Issue number1
Publication statusPublished - 2005

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Erbium
Photoexcitation
Silicon
Silicon Dioxide
Nanocrystals
erbium
Luminescence
Photoluminescence
nanocrystals
Silica
Ions
luminescence
silicon dioxide
photoluminescence
Optical pumping
Light amplifiers
optical pumping
silicon
matrices
light amplifiers

Cite this

Timoshenko, V. Y., Shalygina, O. A., Lisachenko, M. G., Zhigunov, D. M., Teterukov, S. A., Kashkarov, P. K., ... Fujii, M. (2005). Erbium ion luminescence of silicon nanocrystal layers in a silicon dioxide matrix measured under strong optical excitation. Physics of the Solid State, 47(1), 121-124.

Erbium ion luminescence of silicon nanocrystal layers in a silicon dioxide matrix measured under strong optical excitation. / Timoshenko, V Y; Shalygina, O A; Lisachenko, M G; Zhigunov, D M; Teterukov, S A; Kashkarov, P K; Kovalev, D; Zacharias, M; Imakita, K; Fujii, M.

In: Physics of the Solid State, Vol. 47, No. 1, 2005, p. 121-124.

Research output: Contribution to journalArticle

Timoshenko, VY, Shalygina, OA, Lisachenko, MG, Zhigunov, DM, Teterukov, SA, Kashkarov, PK, Kovalev, D, Zacharias, M, Imakita, K & Fujii, M 2005, 'Erbium ion luminescence of silicon nanocrystal layers in a silicon dioxide matrix measured under strong optical excitation', Physics of the Solid State, vol. 47, no. 1, pp. 121-124.
Timoshenko VY, Shalygina OA, Lisachenko MG, Zhigunov DM, Teterukov SA, Kashkarov PK et al. Erbium ion luminescence of silicon nanocrystal layers in a silicon dioxide matrix measured under strong optical excitation. Physics of the Solid State. 2005;47(1):121-124.
Timoshenko, V Y ; Shalygina, O A ; Lisachenko, M G ; Zhigunov, D M ; Teterukov, S A ; Kashkarov, P K ; Kovalev, D ; Zacharias, M ; Imakita, K ; Fujii, M. / Erbium ion luminescence of silicon nanocrystal layers in a silicon dioxide matrix measured under strong optical excitation. In: Physics of the Solid State. 2005 ; Vol. 47, No. 1. pp. 121-124.
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AU - Teterukov, S A

AU - Kashkarov, P K

AU - Kovalev, D

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N2 - The photoluminescence (PL) spectra and kinetics of erbium-doped layers of silicon nanocrystals dispersed in a silicon dioxide matrix (nc-Si/SiO2) are studied. It was found that optical excitation of nc-Si can be transferred with a high efficiency to Er3+ ions present in the surrounding oxide. The efficiency of energy transfer increases with increasing pumping photon energy and intensity. The process of Er3+ excitation is shown to compete successfully with nonradiative recombination in the nc-Si/SiO2 structures. The Er3+ PL lifetime was found to decrease under intense optical pumping, which implies the establishment of inverse population in the Er3+ system. The results obtained demonstrate the very high potential of erbium-doped nc-Si/SiO2 structures when used as active media for optical amplifiers and light-emitting devices operating at a wavelength of 1.5 mum. (C) 2005 Pleiades Publishing, Inc.

AB - The photoluminescence (PL) spectra and kinetics of erbium-doped layers of silicon nanocrystals dispersed in a silicon dioxide matrix (nc-Si/SiO2) are studied. It was found that optical excitation of nc-Si can be transferred with a high efficiency to Er3+ ions present in the surrounding oxide. The efficiency of energy transfer increases with increasing pumping photon energy and intensity. The process of Er3+ excitation is shown to compete successfully with nonradiative recombination in the nc-Si/SiO2 structures. The Er3+ PL lifetime was found to decrease under intense optical pumping, which implies the establishment of inverse population in the Er3+ system. The results obtained demonstrate the very high potential of erbium-doped nc-Si/SiO2 structures when used as active media for optical amplifiers and light-emitting devices operating at a wavelength of 1.5 mum. (C) 2005 Pleiades Publishing, Inc.

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