Erbium ion luminescence of silicon nanocrystal layers in a silicon dioxide matrix measured under strong optical excitation

V Y Timoshenko, O A Shalygina, M G Lisachenko, D M Zhigunov, S A Teterukov, P K Kashkarov, D Kovalev, M Zacharias, K Imakita, M Fujii

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Abstract

The photoluminescence (PL) spectra and kinetics of erbium-doped layers of silicon nanocrystals dispersed in a silicon dioxide matrix (nc-Si/SiO2) are studied. It was found that optical excitation of nc-Si can be transferred with a high efficiency to Er3+ ions present in the surrounding oxide. The efficiency of energy transfer increases with increasing pumping photon energy and intensity. The process of Er3+ excitation is shown to compete successfully with nonradiative recombination in the nc-Si/SiO2 structures. The Er3+ PL lifetime was found to decrease under intense optical pumping, which implies the establishment of inverse population in the Er3+ system. The results obtained demonstrate the very high potential of erbium-doped nc-Si/SiO2 structures when used as active media for optical amplifiers and light-emitting devices operating at a wavelength of 1.5 mum. (C) 2005 Pleiades Publishing, Inc.
Original languageEnglish
Pages (from-to)121-124
Number of pages4
JournalPhysics of the Solid State
Volume47
Issue number1
Publication statusPublished - 2005

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Timoshenko, V. Y., Shalygina, O. A., Lisachenko, M. G., Zhigunov, D. M., Teterukov, S. A., Kashkarov, P. K., ... Fujii, M. (2005). Erbium ion luminescence of silicon nanocrystal layers in a silicon dioxide matrix measured under strong optical excitation. Physics of the Solid State, 47(1), 121-124.