Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates

A J Smith; R M Gwilliam; V Stolojan; A P Knights; P G Coleman; A Kallis; S H Yeong

doi:10.1063/1.3262527

Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates

A J Smith, R M Gwilliam, V Stolojan, A P Knights, P G Coleman, A Kallis, S H Yeong

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (SciVal)

Original language	English
Article number	103514
Journal	Journal of Applied Physics
Volume	106
Issue number	10
DOIs	https://doi.org/10.1063/1.3262527
Publication status	Published - 15 Nov 2009

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10.1063/1.3262527

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author = "Smith, \{A J\} and Gwilliam, \{R M\} and V Stolojan and Knights, \{A P\} and Coleman, \{P G\} and A Kallis and Yeong, \{S H\}",

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AU - Smith, A J

AU - Gwilliam, R M

AU - Stolojan, V

AU - Knights, A P

AU - Coleman, P G

AU - Kallis, A

AU - Yeong, S H

PY - 2009/11/15

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DO - 10.1063/1.3262527

M3 - Article

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VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 103514

ER -

Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates

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