Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates

A J Smith, R M Gwilliam, V Stolojan, A P Knights, P G Coleman, A Kallis, S H Yeong

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)
Original languageEnglish
Article number103514
JournalJournal of Applied Physics
Volume106
Issue number10
DOIs
Publication statusPublished - 15 Nov 2009

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