Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates

A J Smith, R M Gwilliam, V Stolojan, A P Knights, P G Coleman, A Kallis, S H Yeong

Research output: Contribution to journalArticle

3 Citations (Scopus)
Original languageEnglish
Article number103514
JournalJournal of Applied Physics
Volume106
Issue number10
DOIs
Publication statusPublished - 15 Nov 2009

Cite this

Smith, A. J., Gwilliam, R. M., Stolojan, V., Knights, A. P., Coleman, P. G., Kallis, A., & Yeong, S. H. (2009). Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates. Journal of Applied Physics, 106(10), [103514]. https://doi.org/10.1063/1.3262527