Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates

A J Smith, R M Gwilliam, V Stolojan, A P Knights, P G Coleman, A Kallis, S H Yeong

Research output: Contribution to journalArticle

3 Citations (Scopus)
Original languageEnglish
Article number103514
JournalJournal of Applied Physics
Volume106
Issue number10
DOIs
Publication statusPublished - 15 Nov 2009

Cite this

Smith, A. J., Gwilliam, R. M., Stolojan, V., Knights, A. P., Coleman, P. G., Kallis, A., & Yeong, S. H. (2009). Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates. Journal of Applied Physics, 106(10), [103514]. https://doi.org/10.1063/1.3262527

Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates. / Smith, A J; Gwilliam, R M; Stolojan, V; Knights, A P; Coleman, P G; Kallis, A; Yeong, S H.

In: Journal of Applied Physics, Vol. 106, No. 10, 103514, 15.11.2009.

Research output: Contribution to journalArticle

Smith, A J ; Gwilliam, R M ; Stolojan, V ; Knights, A P ; Coleman, P G ; Kallis, A ; Yeong, S H. / Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates. In: Journal of Applied Physics. 2009 ; Vol. 106, No. 10.
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