Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates

A J Smith; R M Gwilliam; V Stolojan; A P Knights; P G Coleman; A Kallis; S H Yeong

doi:10.1063/1.3262527

Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates

A J Smith, R M Gwilliam, V Stolojan, A P Knights, P G Coleman, A Kallis, S H Yeong

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (SciVal)

Original language	English
Article number	103514
Journal	Journal of Applied Physics
Volume	106
Issue number	10
DOIs	https://doi.org/10.1063/1.3262527
Publication status	Published - 15 Nov 2009

Access to Document

10.1063/1.3262527

Cite this

@article{702e9dc5a8804ab98cf32b674b5daafd,

title = "Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates",

author = "Smith, {A J} and Gwilliam, {R M} and V Stolojan and Knights, {A P} and Coleman, {P G} and A Kallis and Yeong, {S H}",

year = "2009",

month = nov,

day = "15",

doi = "10.1063/1.3262527",

language = "English",

volume = "106",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates

AU - Smith, A J

AU - Gwilliam, R M

AU - Stolojan, V

AU - Knights, A P

AU - Coleman, P G

AU - Kallis, A

AU - Yeong, S H

PY - 2009/11/15

Y1 - 2009/11/15

UR - http://www.scopus.com/inward/record.url?scp=71749103053&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1063/1.3262527

U2 - 10.1063/1.3262527

DO - 10.1063/1.3262527

M3 - Article

SN - 0021-8979

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 103514

ER -

Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates

Access to Document

Other files and links

Cite this