Enhancement of electroluminescence from TiO[sub 2]/p[sup +]-Si heterostructure-based devices through engineering of oxygen vacancies in TiO[sub 2]

Yuanyuan Zhang; Xiangyang Ma; Peiliang Chen; Dongsheng Li; Xiaodong Pi; Deren Yang; P G Coleman

doi:10.1063/1.3276547

Enhancement of electroluminescence from TiO[sub 2]/p[sup +]-Si heterostructure-based devices through engineering of oxygen vacancies in TiO[sub 2]

Yuanyuan Zhang, Xiangyang Ma, Peiliang Chen, Dongsheng Li, Xiaodong Pi, Deren Yang, P G Coleman

Department of Physics

Research output: Contribution to journal › Article › peer-review

33 Citations (SciVal)

Original language	English
Article number	252102
Journal	Applied Physics Letters
Volume	95
Issue number	25
DOIs	https://doi.org/10.1063/1.3276547
Publication status	Published - 21 Dec 2009

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title = "Enhancement of electroluminescence from TiO[sub 2]/p[sup +]-Si heterostructure-based devices through engineering of oxygen vacancies in TiO[sub 2]",

author = "Yuanyuan Zhang and Xiangyang Ma and Peiliang Chen and Dongsheng Li and Xiaodong Pi and Deren Yang and Coleman, {P G}",

year = "2009",

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language = "English",

volume = "95",

journal = "Applied Physics Letters",

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T1 - Enhancement of electroluminescence from TiO[sub 2]/p[sup +]-Si heterostructure-based devices through engineering of oxygen vacancies in TiO[sub 2]

AU - Zhang, Yuanyuan

AU - Ma, Xiangyang

AU - Chen, Peiliang

AU - Li, Dongsheng

AU - Pi, Xiaodong

AU - Yang, Deren

AU - Coleman, P G

PY - 2009/12/21

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UR - http://dx.doi.org/10.1063/1.3276547

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VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252102

ER -

Enhancement of electroluminescence from TiO[sub 2]/p[sup +]-Si heterostructure-based devices through engineering of oxygen vacancies in TiO[sub 2]

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