Enhancement of electroluminescence from TiO[sub 2]/p[sup +]-Si heterostructure-based devices through engineering of oxygen vacancies in TiO[sub 2]

Yuanyuan Zhang, Xiangyang Ma, Peiliang Chen, Dongsheng Li, Xiaodong Pi, Deren Yang, P G Coleman

Research output: Contribution to journalArticle

24 Citations (Scopus)
Original languageEnglish
Article number252102
JournalApplied Physics Letters
Volume95
Issue number25
DOIs
Publication statusPublished - 21 Dec 2009

Cite this

Enhancement of electroluminescence from TiO[sub 2]/p[sup +]-Si heterostructure-based devices through engineering of oxygen vacancies in TiO[sub 2]. / Zhang, Yuanyuan; Ma, Xiangyang; Chen, Peiliang; Li, Dongsheng; Pi, Xiaodong; Yang, Deren; Coleman, P G.

In: Applied Physics Letters, Vol. 95, No. 25, 252102, 21.12.2009.

Research output: Contribution to journalArticle

Zhang, Yuanyuan ; Ma, Xiangyang ; Chen, Peiliang ; Li, Dongsheng ; Pi, Xiaodong ; Yang, Deren ; Coleman, P G. / Enhancement of electroluminescence from TiO[sub 2]/p[sup +]-Si heterostructure-based devices through engineering of oxygen vacancies in TiO[sub 2]. In: Applied Physics Letters. 2009 ; Vol. 95, No. 25.
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