Enhanced photoluminescence from InGaN/GaN quantum wells on a GaN/Si(111) template with extended three-dimensional GaN growth on low-temperature AIN interlayer

Q. Jiang, C.J. Lewins, D.W.E. Allsopp, C.R. Bowen, W.N. Wang, A. Satka, J. Priesol, F. Uherek

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