Enhanced photoluminescence from InGaN/GaN quantum wells on a GaN/Si(111) template with extended three-dimensional GaN growth on low-temperature AIN interlayer

Q. Jiang, C.J. Lewins, D.W.E. Allsopp, C.R. Bowen, W.N. Wang, A. Satka, J. Priesol, F. Uherek

Research output: Contribution to journalArticle

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Abstract

This paper describes a low-cost route for the reduction of dislocations during growth of GaN on Si(111) using metalorganic vapour phase epitaxy (MOVPE) through three-dimensional (3D) island growth on a low temperature AlN layer which introduces a compressive stress into the over-lying GaN layer to compensate for the thermal mismatch stress between the nitride layer and Si(111) substrate. Such a 3D growth process leads to the reduction of grain twist as the result of the reduction in the number of dislocations having a component parallel to the basal plane. The dislocation reduction process leads to a more uniform luminescence from InGaN/GaN quantum wells, as revealed by spectrally-resolved cathodoluminescence imaging of the cross-section of samples.
Original languageEnglish
Article number061002
JournalJapanese Journal of Applied Physics
Volume52
Issue number6
Early online date23 May 2013
DOIs
Publication statusPublished - 23 May 2013

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Semiconductor quantum wells
interlayers
Photoluminescence
templates
quantum wells
photoluminescence
Temperature
Metallorganic vapor phase epitaxy
Cathodoluminescence
cathodoluminescence
Compressive stress
vapor phase epitaxy
Nitrides
nitrides
Luminescence
routes
luminescence
Imaging techniques
cross sections
Substrates

Cite this

Enhanced photoluminescence from InGaN/GaN quantum wells on a GaN/Si(111) template with extended three-dimensional GaN growth on low-temperature AIN interlayer. / Jiang, Q.; Lewins, C.J.; Allsopp, D.W.E.; Bowen, C.R.; Wang, W.N.; Satka, A.; Priesol, J.; Uherek, F.

In: Japanese Journal of Applied Physics, Vol. 52, No. 6, 061002, 23.05.2013.

Research output: Contribution to journalArticle

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AU - Priesol, J.

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