Enhanced-performance operation of InGaN MQW lasers with air/nitride distributed Bragg reflector defined by focused ion beam etching

C. Marinelli; L. J. Sargent; M. Bordovsky; A. Wonfor; J. M. Rorison; R. V. Penty; I. H. White; P. J. Heard; G. Hasnain; R. P. Schneider

doi:10.1117/12.429784

Enhanced-performance operation of InGaN MQW lasers with air/nitride distributed Bragg reflector defined by focused ion beam etching

C. Marinelli
, L. J. Sargent
, M. Bordovsky
, A. Wonfor
, J. M. Rorison
, R. V. Penty
, I. H. White
, P. J. Heard
, G. Hasnain
, R. P. Schneider

University of Bristol

Research output: Contribution to journal › Article › peer-review

1 Citation (SciVal)

Abstract

Threshold reduction and enhanced mode selectivity are demonstrated in pulsed GaN-based lasers upon the introduction of 5λ/4 air/nitride Bragg gratings defined by focused ion beam (FIB) etching. A 13% reduction in threshold current is obtained from a laser with a 5μm wide ridge by introducing a deep-etch air/nitride mirror. The presence of a reduced-depth Bragg grating, etched across 4μm wide ridge structure using a lower FIB dose, results in single-peak spectral characteristics for currents up to 1.14·I_Th. The introduction of the Bragg mirrors always results in a broadening of the near field parallel to the epitaxial planes.

Original language	English
Pages (from-to)	57-66
Number of pages	10
Journal	Proceedings of SPIE-The International Society for Optical Engineering
Volume	4287
DOIs	https://doi.org/10.1117/12.429784
Publication status	Published - 6 Jun 2001

Keywords

Air/semiconductor
Bragg grating
InGaN
Laser diode
Transverse mode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Marinelli, C., Sargent, L. J., Bordovsky, M., Wonfor, A., Rorison, J. M., Penty, R. V., White, I. H., Heard, P. J., Hasnain, G., & Schneider, R. P. (2001). Enhanced-performance operation of InGaN MQW lasers with air/nitride distributed Bragg reflector defined by focused ion beam etching. Proceedings of SPIE-The International Society for Optical Engineering, 4287, 57-66. https://doi.org/10.1117/12.429784

Marinelli, C, Sargent, LJ, Bordovsky, M, Wonfor, A, Rorison, JM, Penty, RV, White, IH, Heard, PJ, Hasnain, G & Schneider, RP 2001, 'Enhanced-performance operation of InGaN MQW lasers with air/nitride distributed Bragg reflector defined by focused ion beam etching', Proceedings of SPIE-The International Society for Optical Engineering, vol. 4287, pp. 57-66. https://doi.org/10.1117/12.429784

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title = "Enhanced-performance operation of InGaN MQW lasers with air/nitride distributed Bragg reflector defined by focused ion beam etching",

abstract = "Threshold reduction and enhanced mode selectivity are demonstrated in pulsed GaN-based lasers upon the introduction of 5λ/4 air/nitride Bragg gratings defined by focused ion beam (FIB) etching. A 13\% reduction in threshold current is obtained from a laser with a 5μm wide ridge by introducing a deep-etch air/nitride mirror. The presence of a reduced-depth Bragg grating, etched across 4μm wide ridge structure using a lower FIB dose, results in single-peak spectral characteristics for currents up to 1.14·ITh. The introduction of the Bragg mirrors always results in a broadening of the near field parallel to the epitaxial planes.",

keywords = "Air/semiconductor, Bragg grating, InGaN, Laser diode, Transverse mode",

author = "C. Marinelli and Sargent, \{L. J.\} and M. Bordovsky and A. Wonfor and Rorison, \{J. M.\} and Penty, \{R. V.\} and White, \{I. H.\} and Heard, \{P. J.\} and G. Hasnain and Schneider, \{R. P.\}",

year = "2001",

month = jun,

day = "6",

doi = "10.1117/12.429784",

language = "English",

volume = "4287",

pages = "57--66",

journal = "Proceedings of SPIE-The International Society for Optical Engineering",

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TY - JOUR

T1 - Enhanced-performance operation of InGaN MQW lasers with air/nitride distributed Bragg reflector defined by focused ion beam etching

AU - Marinelli, C.

AU - Sargent, L. J.

AU - Bordovsky, M.

AU - Wonfor, A.

AU - Rorison, J. M.

AU - Penty, R. V.

AU - White, I. H.

AU - Heard, P. J.

AU - Hasnain, G.

AU - Schneider, R. P.

PY - 2001/6/6

Y1 - 2001/6/6

N2 - Threshold reduction and enhanced mode selectivity are demonstrated in pulsed GaN-based lasers upon the introduction of 5λ/4 air/nitride Bragg gratings defined by focused ion beam (FIB) etching. A 13% reduction in threshold current is obtained from a laser with a 5μm wide ridge by introducing a deep-etch air/nitride mirror. The presence of a reduced-depth Bragg grating, etched across 4μm wide ridge structure using a lower FIB dose, results in single-peak spectral characteristics for currents up to 1.14·ITh. The introduction of the Bragg mirrors always results in a broadening of the near field parallel to the epitaxial planes.

AB - Threshold reduction and enhanced mode selectivity are demonstrated in pulsed GaN-based lasers upon the introduction of 5λ/4 air/nitride Bragg gratings defined by focused ion beam (FIB) etching. A 13% reduction in threshold current is obtained from a laser with a 5μm wide ridge by introducing a deep-etch air/nitride mirror. The presence of a reduced-depth Bragg grating, etched across 4μm wide ridge structure using a lower FIB dose, results in single-peak spectral characteristics for currents up to 1.14·ITh. The introduction of the Bragg mirrors always results in a broadening of the near field parallel to the epitaxial planes.

KW - Air/semiconductor

KW - Bragg grating

KW - InGaN

KW - Laser diode

KW - Transverse mode

UR - https://www.scopus.com/pages/publications/17944365356

U2 - 10.1117/12.429784

DO - 10.1117/12.429784

M3 - Article

AN - SCOPUS:17944365356

SN - 0277-786X

VL - 4287

SP - 57

EP - 66

JO - Proceedings of SPIE-The International Society for Optical Engineering

JF - Proceedings of SPIE-The International Society for Optical Engineering

ER -

Enhanced-performance operation of InGaN MQW lasers with air/nitride distributed Bragg reflector defined by focused ion beam etching

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Keywords

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