Abstract
Threshold reduction and enhanced mode selectivity are demonstrated in pulsed GaN-based lasers upon the introduction of 5λ/4 air/nitride Bragg gratings defined by focused ion beam (FIB) etching. A 13% reduction in threshold current is obtained from a laser with a 5μm wide ridge by introducing a deep-etch air/nitride mirror. The presence of a reduced-depth Bragg grating, etched across 4μm wide ridge structure using a lower FIB dose, results in single-peak spectral characteristics for currents up to 1.14·ITh. The introduction of the Bragg mirrors always results in a broadening of the near field parallel to the epitaxial planes.
Original language | English |
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Pages (from-to) | 57-66 |
Number of pages | 10 |
Journal | Proceedings of SPIE-The International Society for Optical Engineering |
Volume | 4287 |
DOIs | |
Publication status | Published - 6 Jun 2001 |
Keywords
- Air/semiconductor
- Bragg grating
- InGaN
- Laser diode
- Transverse mode
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering