Enhanced-performance operation of InGaN MQW lasers with air/nitride distributed Bragg reflector defined by focused ion beam etching

C. Marinelli, L. J. Sargent, M. Bordovsky, A. Wonfor, J. M. Rorison, R. V. Penty, I. H. White, P. J. Heard, G. Hasnain, R. P. Schneider

Research output: Contribution to journalArticle

Abstract

Threshold reduction and enhanced mode selectivity are demonstrated in pulsed GaN-based lasers upon the introduction of 5λ/4 air/nitride Bragg gratings defined by focused ion beam (FIB) etching. A 13% reduction in threshold current is obtained from a laser with a 5μm wide ridge by introducing a deep-etch air/nitride mirror. The presence of a reduced-depth Bragg grating, etched across 4μm wide ridge structure using a lower FIB dose, results in single-peak spectral characteristics for currents up to 1.14·ITh. The introduction of the Bragg mirrors always results in a broadening of the near field parallel to the epitaxial planes.

Original languageEnglish
Pages (from-to)57-66
Number of pages10
JournalProceedings of SPIE-The International Society for Optical Engineering
Volume4287
DOIs
Publication statusPublished - 6 Jun 2001

Keywords

  • Air/semiconductor
  • Bragg grating
  • InGaN
  • Laser diode
  • Transverse mode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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