Enhanced nitrogen diffusion in 4H-SiC

G J Phelps; N G Wright; E G Chester; C M Johnson; A G O'Neill; S Ortolland; A Horsfall; K Vassilevski; R M Gwilliam; P G Coleman; C P Burrows

Enhanced nitrogen diffusion in 4H-SiC

G J Phelps, N G Wright, E G Chester, C M Johnson, A G O'Neill, S Ortolland, A Horsfall, K Vassilevski, R M Gwilliam, P G Coleman, C P Burrows

Department of Physics

Research output: Contribution to journal › Article › peer-review

13 Citations (SciVal)

Original language	English
Pages (from-to)	228-230
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	2
Publication status	Published - 2002

Bibliographical note

ID number: ISI:000173153800022

Cite this

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title = "Enhanced nitrogen diffusion in 4H-SiC",

author = "Phelps, {G J} and Wright, {N G} and Chester, {E G} and Johnson, {C M} and O'Neill, {A G} and S Ortolland and A Horsfall and K Vassilevski and Gwilliam, {R M} and Coleman, {P G} and Burrows, {C P}",

note = "ID number: ISI:000173153800022",

year = "2002",

language = "English",

volume = "80",

pages = "228--230",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "2",

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TY - JOUR

T1 - Enhanced nitrogen diffusion in 4H-SiC

AU - Phelps, G J

AU - Wright, N G

AU - Chester, E G

AU - Johnson, C M

AU - O'Neill, A G

AU - Ortolland, S

AU - Horsfall, A

AU - Vassilevski, K

AU - Gwilliam, R M

AU - Coleman, P G

AU - Burrows, C P

N1 - ID number: ISI:000173153800022

PY - 2002

Y1 - 2002

M3 - Article

SN - 0003-6951

VL - 80

SP - 228

EP - 230

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -