Enhanced external quantum efficiency from Cu2ZnSn(S,Se)4 solar cells prepared form nanoparticle inks

Yongtao Yu, Guillaume Zoppi, Laurence Peter, Sophie Jourdain, Neil Beattie

Research output: Contribution to journalArticle

Abstract

Cu2ZnSn(S,Se)4 (CZTSSe) thin film photovoltaic absorber layers are fabricated by selenizing Cu2ZnSnS4 (CZTS) nanoparticle thin films in a selenium rich atmosphere. The selenium vapor pressure is controlled to optimize the morphology and quality of the CZTSSe thin film. The largest grains are formed at the highest selenium vapor pressure of 226 mbar. Integrating this photovoltaic absorber layer in a conventional thin film solar cell structure yields a champion short circuit current of 37.9 mA/cm2 without an antireflection coating. This stems from an improved external quantum efficiency characteristic in the visible and near-infrared part of the solar spectrum. The physical basis of this improvement is qualitatively attributed to a substantial increase in the minority carrier diffusion length.
LanguageEnglish
Article number08RC01
Number of pages8
JournalJapanese Journal of Applied Physics
Volume57
Issue number8S3
StatusAccepted/In press - 6 Jun 2019

Cite this

Enhanced external quantum efficiency from Cu2ZnSn(S,Se)4 solar cells prepared form nanoparticle inks. / Yu, Yongtao; Zoppi, Guillaume ; Peter, Laurence; Jourdain, Sophie; Beattie, Neil.

In: Japanese Journal of Applied Physics, Vol. 57, No. 8S3, 08RC01, 06.06.2019.

Research output: Contribution to journalArticle

Yu, Yongtao ; Zoppi, Guillaume ; Peter, Laurence ; Jourdain, Sophie ; Beattie, Neil. / Enhanced external quantum efficiency from Cu2ZnSn(S,Se)4 solar cells prepared form nanoparticle inks. In: Japanese Journal of Applied Physics. 2019 ; Vol. 57, No. 8S3.
@article{b47ed909fd924d9ca59b909a70af646f,
title = "Enhanced external quantum efficiency from Cu2ZnSn(S,Se)4 solar cells prepared form nanoparticle inks",
abstract = "Cu2ZnSn(S,Se)4 (CZTSSe) thin film photovoltaic absorber layers are fabricated by selenizing Cu2ZnSnS4 (CZTS) nanoparticle thin films in a selenium rich atmosphere. The selenium vapor pressure is controlled to optimize the morphology and quality of the CZTSSe thin film. The largest grains are formed at the highest selenium vapor pressure of 226 mbar. Integrating this photovoltaic absorber layer in a conventional thin film solar cell structure yields a champion short circuit current of 37.9 mA/cm2 without an antireflection coating. This stems from an improved external quantum efficiency characteristic in the visible and near-infrared part of the solar spectrum. The physical basis of this improvement is qualitatively attributed to a substantial increase in the minority carrier diffusion length.",
author = "Yongtao Yu and Guillaume Zoppi and Laurence Peter and Sophie Jourdain and Neil Beattie",
year = "2019",
month = "6",
day = "6",
language = "English",
volume = "57",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8S3",

}

TY - JOUR

T1 - Enhanced external quantum efficiency from Cu2ZnSn(S,Se)4 solar cells prepared form nanoparticle inks

AU - Yu, Yongtao

AU - Zoppi, Guillaume

AU - Peter, Laurence

AU - Jourdain, Sophie

AU - Beattie, Neil

PY - 2019/6/6

Y1 - 2019/6/6

N2 - Cu2ZnSn(S,Se)4 (CZTSSe) thin film photovoltaic absorber layers are fabricated by selenizing Cu2ZnSnS4 (CZTS) nanoparticle thin films in a selenium rich atmosphere. The selenium vapor pressure is controlled to optimize the morphology and quality of the CZTSSe thin film. The largest grains are formed at the highest selenium vapor pressure of 226 mbar. Integrating this photovoltaic absorber layer in a conventional thin film solar cell structure yields a champion short circuit current of 37.9 mA/cm2 without an antireflection coating. This stems from an improved external quantum efficiency characteristic in the visible and near-infrared part of the solar spectrum. The physical basis of this improvement is qualitatively attributed to a substantial increase in the minority carrier diffusion length.

AB - Cu2ZnSn(S,Se)4 (CZTSSe) thin film photovoltaic absorber layers are fabricated by selenizing Cu2ZnSnS4 (CZTS) nanoparticle thin films in a selenium rich atmosphere. The selenium vapor pressure is controlled to optimize the morphology and quality of the CZTSSe thin film. The largest grains are formed at the highest selenium vapor pressure of 226 mbar. Integrating this photovoltaic absorber layer in a conventional thin film solar cell structure yields a champion short circuit current of 37.9 mA/cm2 without an antireflection coating. This stems from an improved external quantum efficiency characteristic in the visible and near-infrared part of the solar spectrum. The physical basis of this improvement is qualitatively attributed to a substantial increase in the minority carrier diffusion length.

M3 - Article

VL - 57

JO - Japanese Journal of Applied Physics

T2 - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 8S3

M1 - 08RC01

ER -