Embedding manganese doped zinc sulfide quantum dots in gallium nitride LEDs based on photonic crystals

J. Silver, X. Yan, R. Withnall, G. Fern, J. Sumner, P. Shields, D. Allsopp

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Doped quantum dots (ca. 3.3(1) nm size) of ZnS:Mn phosphor have been synthesized and their photoluminescence (PL) properties have been characterised. The particles were successfully drop cast into the holes in a photonic crystal grown in the layers of a GaN LED crystal (previously grown on a sapphire substrate).
Original languageEnglish
Title of host publicationProceedings of the International Display Workshops
Pages1405-1408
Number of pages4
Volume3
Publication statusPublished - 2011
Event18th International Display Workshops 2011 - Nagoya, Japan
Duration: 7 Dec 20119 Dec 2011

Conference

Conference18th International Display Workshops 2011
CountryJapan
CityNagoya
Period7/12/119/12/11

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  • Cite this

    Silver, J., Yan, X., Withnall, R., Fern, G., Sumner, J., Shields, P., & Allsopp, D. (2011). Embedding manganese doped zinc sulfide quantum dots in gallium nitride LEDs based on photonic crystals. In Proceedings of the International Display Workshops (Vol. 3, pp. 1405-1408)