Doped quantum dots (ca. 3.3(1) nm size) of ZnS:Mn phosphor have been synthesized and their photoluminescence (PL) properties have been characterised. The particles were successfully drop cast into the holes in a photonic crystal grown in the layers of a GaN LED crystal (previously grown on a sapphire substrate).
|Title of host publication||Proceedings of the International Display Workshops|
|Number of pages||4|
|Publication status||Published - 2011|
|Event||18th International Display Workshops 2011 - Nagoya, Japan|
Duration: 7 Dec 2011 → 9 Dec 2011
|Conference||18th International Display Workshops 2011|
|Period||7/12/11 → 9/12/11|