Abstract
Doped quantum dots (ca. 3.3(1) nm size) of ZnS:Mn phosphor have been synthesized and their photoluminescence (PL) properties have been characterised. The particles were successfully drop cast into the holes in a photonic crystal grown in the layers of a GaN LED crystal (previously grown on a sapphire substrate).
Original language | English |
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Title of host publication | Proceedings of the International Display Workshops |
Pages | 1405-1408 |
Number of pages | 4 |
Volume | 3 |
Publication status | Published - 2011 |
Event | 18th International Display Workshops 2011 - Nagoya, Japan Duration: 7 Dec 2011 → 9 Dec 2011 |
Conference
Conference | 18th International Display Workshops 2011 |
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Country/Territory | Japan |
City | Nagoya |
Period | 7/12/11 → 9/12/11 |