Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures

Kei Takashina; K Nishiguchi; Y Ono; A Fujiwara; T Fujisawa; Y Hirayama; K Muraki

doi:10.1063/1.3112602

Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures

Kei Takashina, K Nishiguchi, Y Ono, A Fujiwara, T Fujisawa, Y Hirayama, K Muraki

Department of Physics

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Abstract

We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.

Original language	English
Article number	142104
Number of pages	3
Journal	Applied Physics Letters
Volume	94
Issue number	14
DOIs	https://doi.org/10.1063/1.3112602
Publication status	Published - 6 Apr 2009

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Takashina_APL_2009_94_142014.pdf
Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Takashina, K., Nishiguchi, K., Ono, Y., Fujiwara, A., Fujisawa, T., Hirayama, Y. and Muraki, K., 2009. Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures. Applied Physics Letters, 94 (14), 142104 and may be found at http://dx.doi.org/10.1063/1.3112602

Cite this

@article{6781176de0ea43b8bf6e8b3c16af23cd,

title = "Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures",

abstract = "We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.",

author = "Kei Takashina and K Nishiguchi and Y Ono and A Fujiwara and T Fujisawa and Y Hirayama and K Muraki",

year = "2009",

month = apr,

day = "6",

doi = "10.1063/1.3112602",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "14",

}

TY - JOUR

T1 - Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures

AU - Takashina, Kei

AU - Nishiguchi, K

AU - Ono, Y

AU - Fujiwara, A

AU - Fujisawa, T

AU - Hirayama, Y

AU - Muraki, K

PY - 2009/4/6

Y1 - 2009/4/6

N2 - We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.

AB - We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.

UR - http://www.scopus.com/inward/record.url?scp=64349089189&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1063/1.3112602

U2 - 10.1063/1.3112602

DO - 10.1063/1.3112602

M3 - Article

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142104

ER -

Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures

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