Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures

Kei Takashina, K Nishiguchi, Y Ono, A Fujiwara, T Fujisawa, Y Hirayama, K Muraki

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We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.
Original languageEnglish
Article number142104
Number of pages3
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 6 Apr 2009


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