Electronic structure of CuCrO2 thin films grown on Al2O3(001) by oxygen plasma assisted molecular beam epitaxy

D. Shin; J.S. Foord; R.G. Egdell; A. Walsh

doi:10.1063/1.4768726

Electronic structure of CuCrO₂ thin films grown on Al₂O₃(001) by oxygen plasma assisted molecular beam epitaxy

D. Shin, J.S. Foord, R.G. Egdell, A. Walsh

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Abstract

Thin films of CuCrO have been grown on AlO (001) substrates by oxygen plasma assisted molecular beam epitaxy. With a substrate temperature of 700°C or 750°C, the films showed an unanticipated (015) orientation but at a higher substrate temperature of 800°C the expected basal (001) orientation predominates. The optical absorption spectrum of CuCrO shows a direct allowed absorption onset at 3.18eV together with a weak peak at 2.0eV which is suppressed by Sn doping. This suggests that the low energy peak should be attributed to 3d→3d excitations associated with Cu defect states rather than excitations localised on Cr. Valence band X-ray photoemission spectra of (001) and (015) oriented CuCrO are compared with those obtained from polycrystalline samples.

Original language	English
Article number	113718
Journal	Journal of Applied Physics
Volume	112
Issue number	11
DOIs	https://doi.org/10.1063/1.4768726
Publication status	Published - Dec 2012

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10.1063/1.4768726

JApplPhys 112 113718
Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Shin, D., Foord, J. S., Egdell, R. G., & Walsh, A. (2012). Electronic structure of CuCrO2 thin films grown on Al2O3(001) by oxygen plasma assisted molecular beam epitaxy. Journal of Applied Physics, 112(11) and may be found at http://dx.doi.org/10.1063/1.4768726
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title = "Electronic structure of CuCrO2 thin films grown on Al2O3(001) by oxygen plasma assisted molecular beam epitaxy",

abstract = "Thin films of CuCrO have been grown on AlO (001) substrates by oxygen plasma assisted molecular beam epitaxy. With a substrate temperature of 700°C or 750°C, the films showed an unanticipated (015) orientation but at a higher substrate temperature of 800°C the expected basal (001) orientation predominates. The optical absorption spectrum of CuCrO shows a direct allowed absorption onset at 3.18eV together with a weak peak at 2.0eV which is suppressed by Sn doping. This suggests that the low energy peak should be attributed to 3d→3d excitations associated with Cu defect states rather than excitations localised on Cr. Valence band X-ray photoemission spectra of (001) and (015) oriented CuCrO are compared with those obtained from polycrystalline samples. ",

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AU - Shin, D.

AU - Foord, J.S.

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AU - Walsh, A.

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AB - Thin films of CuCrO have been grown on AlO (001) substrates by oxygen plasma assisted molecular beam epitaxy. With a substrate temperature of 700°C or 750°C, the films showed an unanticipated (015) orientation but at a higher substrate temperature of 800°C the expected basal (001) orientation predominates. The optical absorption spectrum of CuCrO shows a direct allowed absorption onset at 3.18eV together with a weak peak at 2.0eV which is suppressed by Sn doping. This suggests that the low energy peak should be attributed to 3d→3d excitations associated with Cu defect states rather than excitations localised on Cr. Valence band X-ray photoemission spectra of (001) and (015) oriented CuCrO are compared with those obtained from polycrystalline samples.

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Electronic structure of CuCrO₂ thin films grown on Al₂O₃(001) by oxygen plasma assisted molecular beam epitaxy

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