Electronic structure of CuCrO2 thin films grown on Al2O3(001) by oxygen plasma assisted molecular beam epitaxy

D. Shin, J.S. Foord, R.G. Egdell, A. Walsh

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Abstract

Thin films of CuCrO have been grown on AlO (001) substrates by oxygen plasma assisted molecular beam epitaxy. With a substrate temperature of 700°C or 750°C, the films showed an unanticipated (015) orientation but at a higher substrate temperature of 800°C the expected basal (001) orientation predominates. The optical absorption spectrum of CuCrO shows a direct allowed absorption onset at 3.18eV together with a weak peak at 2.0eV which is suppressed by Sn doping. This suggests that the low energy peak should be attributed to 3d→3d excitations associated with Cu defect states rather than excitations localised on Cr. Valence band X-ray photoemission spectra of (001) and (015) oriented CuCrO are compared with those obtained from polycrystalline samples.
Original languageEnglish
Article number113718
JournalJournal of Applied Physics
Volume112
Issue number11
DOIs
Publication statusPublished - Dec 2012

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oxygen plasma
molecular beam epitaxy
electronic structure
thin films
excitation
optical spectrum
optical absorption
photoelectric emission
valence
absorption spectra
temperature
defects
x rays
energy

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Electronic structure of CuCrO2 thin films grown on Al2O3(001) by oxygen plasma assisted molecular beam epitaxy. / Shin, D.; Foord, J.S.; Egdell, R.G.; Walsh, A.

In: Journal of Applied Physics, Vol. 112, No. 11, 113718, 12.2012.

Research output: Contribution to journalArticle

@article{be662baf405b443497cea7d5dda3f551,
title = "Electronic structure of CuCrO2 thin films grown on Al2O3(001) by oxygen plasma assisted molecular beam epitaxy",
abstract = "Thin films of CuCrO have been grown on AlO (001) substrates by oxygen plasma assisted molecular beam epitaxy. With a substrate temperature of 700°C or 750°C, the films showed an unanticipated (015) orientation but at a higher substrate temperature of 800°C the expected basal (001) orientation predominates. The optical absorption spectrum of CuCrO shows a direct allowed absorption onset at 3.18eV together with a weak peak at 2.0eV which is suppressed by Sn doping. This suggests that the low energy peak should be attributed to 3d→3d excitations associated with Cu defect states rather than excitations localised on Cr. Valence band X-ray photoemission spectra of (001) and (015) oriented CuCrO are compared with those obtained from polycrystalline samples.",
author = "D. Shin and J.S. Foord and R.G. Egdell and A. Walsh",
year = "2012",
month = "12",
doi = "10.1063/1.4768726",
language = "English",
volume = "112",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Electronic structure of CuCrO2 thin films grown on Al2O3(001) by oxygen plasma assisted molecular beam epitaxy

AU - Shin, D.

AU - Foord, J.S.

AU - Egdell, R.G.

AU - Walsh, A.

PY - 2012/12

Y1 - 2012/12

N2 - Thin films of CuCrO have been grown on AlO (001) substrates by oxygen plasma assisted molecular beam epitaxy. With a substrate temperature of 700°C or 750°C, the films showed an unanticipated (015) orientation but at a higher substrate temperature of 800°C the expected basal (001) orientation predominates. The optical absorption spectrum of CuCrO shows a direct allowed absorption onset at 3.18eV together with a weak peak at 2.0eV which is suppressed by Sn doping. This suggests that the low energy peak should be attributed to 3d→3d excitations associated with Cu defect states rather than excitations localised on Cr. Valence band X-ray photoemission spectra of (001) and (015) oriented CuCrO are compared with those obtained from polycrystalline samples.

AB - Thin films of CuCrO have been grown on AlO (001) substrates by oxygen plasma assisted molecular beam epitaxy. With a substrate temperature of 700°C or 750°C, the films showed an unanticipated (015) orientation but at a higher substrate temperature of 800°C the expected basal (001) orientation predominates. The optical absorption spectrum of CuCrO shows a direct allowed absorption onset at 3.18eV together with a weak peak at 2.0eV which is suppressed by Sn doping. This suggests that the low energy peak should be attributed to 3d→3d excitations associated with Cu defect states rather than excitations localised on Cr. Valence band X-ray photoemission spectra of (001) and (015) oriented CuCrO are compared with those obtained from polycrystalline samples.

UR - http://www.scopus.com/inward/record.url?scp=84871218519&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1063/1.4768726

U2 - 10.1063/1.4768726

DO - 10.1063/1.4768726

M3 - Article

VL - 112

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 113718

ER -