Electronic structure of CuCrO2 thin films grown on Al2O3(001) by oxygen plasma assisted molecular beam epitaxy

D. Shin, J.S. Foord, R.G. Egdell, A. Walsh

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Abstract

Thin films of CuCrO have been grown on AlO (001) substrates by oxygen plasma assisted molecular beam epitaxy. With a substrate temperature of 700°C or 750°C, the films showed an unanticipated (015) orientation but at a higher substrate temperature of 800°C the expected basal (001) orientation predominates. The optical absorption spectrum of CuCrO shows a direct allowed absorption onset at 3.18eV together with a weak peak at 2.0eV which is suppressed by Sn doping. This suggests that the low energy peak should be attributed to 3d→3d excitations associated with Cu defect states rather than excitations localised on Cr. Valence band X-ray photoemission spectra of (001) and (015) oriented CuCrO are compared with those obtained from polycrystalline samples.
Original languageEnglish
Article number113718
JournalJournal of Applied Physics
Volume112
Issue number11
DOIs
Publication statusPublished - Dec 2012

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