Electronic band structure of rhenium dichalcogenides

Surani M. Gunasekera; Daniel Wolverson; Lewis S. Hart; Marcin Mucha-Kruczynski

doi:10.1007/s11664-018-6239-0

Electronic band structure of rhenium dichalcogenides

Surani M. Gunasekera, Daniel Wolverson, Lewis S. Hart, Marcin Mucha-Kruczynski

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17 Citations (SciVal)

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Abstract

The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of interband transitions in
these materials, with several close-lying band gaps. Three-dimensional plots
of constant energy surfaces in the Brillouin zone at energies near the band
extrema are used to show that the valence band maximum and conduction
band minimum may not be located at special high symmetry points. We find
that both materials are indirect gap materials and that one must be careful to
consider the whole Brillouin zone volume in addressing this question.

Original language	English
Pages (from-to)	4314-4320
Number of pages	7
Journal	Journal of Electronic Materials
Volume	47
Issue number	8
Early online date	22 Mar 2018
DOIs	https://doi.org/10.1007/s11664-018-6239-0
Publication status	Published - 1 Aug 2018

Keywords

ReS
ReSe
angle-resolved photoemission
band structure
rhenium dichalcogenides

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-018-6239-0Licence: CC BY

Cite this

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title = "Electronic band structure of rhenium dichalcogenides",

abstract = "The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of interband transitions inthese materials, with several close-lying band gaps. Three-dimensional plotsof constant energy surfaces in the Brillouin zone at energies near the bandextrema are used to show that the valence band maximum and conductionband minimum may not be located at special high symmetry points. We findthat both materials are indirect gap materials and that one must be careful toconsider the whole Brillouin zone volume in addressing this question.",

keywords = "ReS, ReSe, angle-resolved photoemission, band structure, rhenium dichalcogenides",

author = "Gunasekera, {Surani M.} and Daniel Wolverson and Hart, {Lewis S.} and Marcin Mucha-Kruczynski",

year = "2018",

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doi = "10.1007/s11664-018-6239-0",

language = "English",

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T1 - Electronic band structure of rhenium dichalcogenides

AU - Gunasekera, Surani M.

AU - Wolverson, Daniel

AU - Hart, Lewis S.

AU - Mucha-Kruczynski, Marcin

PY - 2018/8/1

Y1 - 2018/8/1

N2 - The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of interband transitions inthese materials, with several close-lying band gaps. Three-dimensional plotsof constant energy surfaces in the Brillouin zone at energies near the bandextrema are used to show that the valence band maximum and conductionband minimum may not be located at special high symmetry points. We findthat both materials are indirect gap materials and that one must be careful toconsider the whole Brillouin zone volume in addressing this question.

AB - The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of interband transitions inthese materials, with several close-lying band gaps. Three-dimensional plotsof constant energy surfaces in the Brillouin zone at energies near the bandextrema are used to show that the valence band maximum and conductionband minimum may not be located at special high symmetry points. We findthat both materials are indirect gap materials and that one must be careful toconsider the whole Brillouin zone volume in addressing this question.

KW - ReS

KW - ReSe

KW - angle-resolved photoemission

KW - band structure

KW - rhenium dichalcogenides

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DO - 10.1007/s11664-018-6239-0

M3 - Article

SN - 0361-5235

VL - 47

SP - 4314

EP - 4320

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 8

ER -

Electronic band structure of rhenium dichalcogenides

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Nano-ARPES Studies of Novel Transition Metal Dichalcogenides

Tailoring Magnetic Properties of MN-CR Chalcogenide Alloys and Heterostructures

Dataset for "Interplay of crystal thickness and in-plane anisotropy and evolution of quasi-one-dimensional electronic character in ReSe2"

Balena High Performance Computing (HPC) System

High Performance Computing (HPC) Facility

Cite this

Electronic band structure of rhenium dichalcogenides

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Projects

Nano-ARPES Studies of Novel Transition Metal Dichalcogenides

Tailoring Magnetic Properties of MN-CR Chalcogenide Alloys and Heterostructures

Datasets

Dataset for "Interplay of crystal thickness and in-plane anisotropy and evolution of quasi-one-dimensional electronic character in ReSe2"

Equipment

Balena High Performance Computing (HPC) System

High Performance Computing (HPC) Facility

Cite this