Electronic band structure of rhenium dichalcogenides

Research output: Contribution to journalArticle

3 Citations (Scopus)
32 Downloads (Pure)

Abstract

The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of interband transitions in
these materials, with several close-lying band gaps. Three-dimensional plots
of constant energy surfaces in the Brillouin zone at energies near the band
extrema are used to show that the valence band maximum and conduction
band minimum may not be located at special high symmetry points. We find
that both materials are indirect gap materials and that one must be careful to
consider the whole Brillouin zone volume in addressing this question.
Original languageEnglish
Pages (from-to)4314-4320
Number of pages7
JournalJournal of Electronic Materials
Volume47
Issue number8
Early online date22 Mar 2018
DOIs
Publication statusPublished - 1 Aug 2018

Fingerprint

Rhenium
rhenium
Band structure
Brillouin zones
electronics
Valence bands
Conduction bands
Interfacial energy
Transition metals
Energy gap
range (extremes)
surface energy
conduction bands
plots
transition metals
valence
symmetry
energy

Keywords

  • ReS
  • ReSe
  • angle-resolved photoemission
  • band structure
  • rhenium dichalcogenides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Electronic band structure of rhenium dichalcogenides. / Gunasekera, Surani M.; Wolverson, Daniel; Hart, Lewis S.; Mucha-Kruczynski, Marcin.

In: Journal of Electronic Materials, Vol. 47, No. 8, 01.08.2018, p. 4314-4320.

Research output: Contribution to journalArticle

@article{03f1fdf08566485da8c48d49ceb6bfbb,
title = "Electronic band structure of rhenium dichalcogenides",
abstract = "The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of interband transitions inthese materials, with several close-lying band gaps. Three-dimensional plotsof constant energy surfaces in the Brillouin zone at energies near the bandextrema are used to show that the valence band maximum and conductionband minimum may not be located at special high symmetry points. We findthat both materials are indirect gap materials and that one must be careful toconsider the whole Brillouin zone volume in addressing this question.",
keywords = "ReS, ReSe, angle-resolved photoemission, band structure, rhenium dichalcogenides",
author = "Gunasekera, {Surani M.} and Daniel Wolverson and Hart, {Lewis S.} and Marcin Mucha-Kruczynski",
year = "2018",
month = "8",
day = "1",
doi = "10.1007/s11664-018-6239-0",
language = "English",
volume = "47",
pages = "4314--4320",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "8",

}

TY - JOUR

T1 - Electronic band structure of rhenium dichalcogenides

AU - Gunasekera, Surani M.

AU - Wolverson, Daniel

AU - Hart, Lewis S.

AU - Mucha-Kruczynski, Marcin

PY - 2018/8/1

Y1 - 2018/8/1

N2 - The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of interband transitions inthese materials, with several close-lying band gaps. Three-dimensional plotsof constant energy surfaces in the Brillouin zone at energies near the bandextrema are used to show that the valence band maximum and conductionband minimum may not be located at special high symmetry points. We findthat both materials are indirect gap materials and that one must be careful toconsider the whole Brillouin zone volume in addressing this question.

AB - The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of interband transitions inthese materials, with several close-lying band gaps. Three-dimensional plotsof constant energy surfaces in the Brillouin zone at energies near the bandextrema are used to show that the valence band maximum and conductionband minimum may not be located at special high symmetry points. We findthat both materials are indirect gap materials and that one must be careful toconsider the whole Brillouin zone volume in addressing this question.

KW - ReS

KW - ReSe

KW - angle-resolved photoemission

KW - band structure

KW - rhenium dichalcogenides

UR - http://www.scopus.com/inward/record.url?scp=85044314555&partnerID=8YFLogxK

U2 - 10.1007/s11664-018-6239-0

DO - 10.1007/s11664-018-6239-0

M3 - Article

VL - 47

SP - 4314

EP - 4320

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 8

ER -