Electronic band structure of rhenium dichalcogenides

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Abstract

The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of interband transitions in
these materials, with several close-lying band gaps. Three-dimensional plots
of constant energy surfaces in the Brillouin zone at energies near the band
extrema are used to show that the valence band maximum and conduction
band minimum may not be located at special high symmetry points. We find
that both materials are indirect gap materials and that one must be careful to
consider the whole Brillouin zone volume in addressing this question.
Original languageEnglish
Pages (from-to)4314-4320
Number of pages7
JournalJournal of Electronic Materials
Volume47
Issue number8
Early online date22 Mar 2018
DOIs
Publication statusPublished - 1 Aug 2018

Keywords

  • ReS
  • ReSe
  • angle-resolved photoemission
  • band structure
  • rhenium dichalcogenides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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