Electronic band structure of ReS2 by high-resolution angle-resolved photoemission spectroscopy

James Webb, Lewis Hart, Daniel Wolverson, Chaoyu Chen, Jose Avila, Maria-Carmen Asensio

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Abstract

The rhenium-based transition metal dichalcogenides (TMDs) are atypical of the TMD family due to their highly anisotropic crystalline structure and are recognized as promising materials for two-dimensional heterostructure devices. The nature of the band gap (direct or indirect) for bulk, few-, and single-layer forms of ReSis of particular interest, due to its comparatively weak interplanar interaction. However, the degree of interlayer interaction and the question of whether a transition from indirect to direct gap is observed on reducing thickness (as in other TMDs) are controversial. We present a direct determination of the valence band structure of bulk ReS2 using high-resolution angle-resolved photoemission spectroscopy. We find a clear in-plane anisotropy due to the presence of chains of Re atoms, with a strongly directional effective mass which is larger in the direction orthogonal to the Re chains (2.2 me) than along them (
1.6 me). An appreciable interplane interaction results in an experimentally measured difference of ≈100−200 meV between the valence band maxima at the
Z point (0,0,1/2) and the Γ point (0,0,0) of the three-dimensional Brillouin zone. This leads to a direct gap at  Z and a close-lying but larger gap at Γ, implying that bulk ReSis marginally indirect. This may account for recent conflicting transport and photoluminescence measurements and the resulting uncertainty about the nature of the band gap in this material.
Original languageEnglish
Article number115205
Number of pages8
JournalPhysical Review B
Volume96
Issue number11-15
DOIs
Publication statusPublished - 18 Sep 2017

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