Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate-TiO2 film

Charles Y Cummings; Jay D Wadhawan; Takuya Nakabayashi; Masa-aki Haga; Liza Rassaei; Sara E C Dale; Simon Bending; Martin Pumera; Stephen C Parker; Frank Marken

doi:10.1016/j.jelechem.2011.04.010

Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate-TiO2 film

Charles Y Cummings, Jay D Wadhawan, Takuya Nakabayashi, Masa-aki Haga, Liza Rassaei, Sara E C Dale, Simon Bending, Martin Pumera, Stephen C Parker, Frank Marken

Research output: Contribution to journal › Article › peer-review

15 Citations (SciVal)

Abstract

Focused ion beam (FIB) machining allowed a sub-micron trench to be cut through tin-doped indium oxide (ITO) film on glass to give a generator - collector junction electrode with narrow gap (ca. 600 nm). A layer-by-layer deposited film composed of a dinuclear ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate (as the negative component) and nanoparticulate TiO2 (ca. 6 nm diameter, as the positive component) was formed and investigated first on simple ITO electrodes and then on ITO junction electrodes. The charge transport within this film due to Ru(II/III) redox switching (electron hopping) was investigated and an apparent diffusion coefficient of ca. D app = 2 ( 1) 10-15 m2 s-1 was observed with minimal contributions from intra-molecular Ru-Ru interactions. The benefits of FIB-cut ITO junctions as a tool in determining charge hopping rates are highlighted. 2011 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	196-201
Number of pages	6
Journal	Journal of Electroanalytical Chemistry
Volume	657
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jelechem.2011.04.010
Publication status	Published - Jul 2011

Access to Document

10.1016/j.jelechem.2011.04.010

Cite this

Cummings, C. Y., Wadhawan, J. D., Nakabayashi, T., Haga, M., Rassaei, L., Dale, S. E. C., Bending, S., Pumera, M., Parker, S. C., & Marken, F. (2011). Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate-TiO2 film. Journal of Electroanalytical Chemistry, 657(1-2), 196-201. https://doi.org/10.1016/j.jelechem.2011.04.010

Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate-TiO2 film. / Cummings, Charles Y; Wadhawan, Jay D; Nakabayashi, Takuya et al.
In: Journal of Electroanalytical Chemistry, Vol. 657, No. 1-2, 07.2011, p. 196-201.

Research output: Contribution to journal › Article › peer-review

Cummings, CY, Wadhawan, JD, Nakabayashi, T, Haga, M, Rassaei, L, Dale, SEC , Bending, S, Pumera, M, Parker, SC & Marken, F 2011, 'Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate-TiO2 film', Journal of Electroanalytical Chemistry, vol. 657, no. 1-2, pp. 196-201. https://doi.org/10.1016/j.jelechem.2011.04.010

@article{5bef1f345daa4b1687b19a4b5f470724,

title = "Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate-TiO2 film",

abstract = "Focused ion beam (FIB) machining allowed a sub-micron trench to be cut through tin-doped indium oxide (ITO) film on glass to give a generator - collector junction electrode with narrow gap (ca. 600 nm). A layer-by-layer deposited film composed of a dinuclear ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate (as the negative component) and nanoparticulate TiO2 (ca. 6 nm diameter, as the positive component) was formed and investigated first on simple ITO electrodes and then on ITO junction electrodes. The charge transport within this film due to Ru(II/III) redox switching (electron hopping) was investigated and an apparent diffusion coefficient of ca. D app = 2 ( 1) 10-15 m2 s-1 was observed with minimal contributions from intra-molecular Ru-Ru interactions. The benefits of FIB-cut ITO junctions as a tool in determining charge hopping rates are highlighted. 2011 Elsevier B.V. All rights reserved.",

author = "Cummings, \{Charles Y\} and Wadhawan, \{Jay D\} and Takuya Nakabayashi and Masa-aki Haga and Liza Rassaei and Dale, \{Sara E C\} and Simon Bending and Martin Pumera and Parker, \{Stephen C\} and Frank Marken",

year = "2011",

month = jul,

doi = "10.1016/j.jelechem.2011.04.010",

language = "English",

volume = "657",

pages = "196--201",

journal = "Journal of Electroanalytical Chemistry",

issn = "1572-6657",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate-TiO2 film

AU - Cummings, Charles Y

AU - Wadhawan, Jay D

AU - Nakabayashi, Takuya

AU - Haga, Masa-aki

AU - Rassaei, Liza

AU - Dale, Sara E C

AU - Bending, Simon

AU - Pumera, Martin

AU - Parker, Stephen C

AU - Marken, Frank

PY - 2011/7

Y1 - 2011/7

N2 - Focused ion beam (FIB) machining allowed a sub-micron trench to be cut through tin-doped indium oxide (ITO) film on glass to give a generator - collector junction electrode with narrow gap (ca. 600 nm). A layer-by-layer deposited film composed of a dinuclear ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate (as the negative component) and nanoparticulate TiO2 (ca. 6 nm diameter, as the positive component) was formed and investigated first on simple ITO electrodes and then on ITO junction electrodes. The charge transport within this film due to Ru(II/III) redox switching (electron hopping) was investigated and an apparent diffusion coefficient of ca. D app = 2 ( 1) 10-15 m2 s-1 was observed with minimal contributions from intra-molecular Ru-Ru interactions. The benefits of FIB-cut ITO junctions as a tool in determining charge hopping rates are highlighted. 2011 Elsevier B.V. All rights reserved.

AB - Focused ion beam (FIB) machining allowed a sub-micron trench to be cut through tin-doped indium oxide (ITO) film on glass to give a generator - collector junction electrode with narrow gap (ca. 600 nm). A layer-by-layer deposited film composed of a dinuclear ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate (as the negative component) and nanoparticulate TiO2 (ca. 6 nm diameter, as the positive component) was formed and investigated first on simple ITO electrodes and then on ITO junction electrodes. The charge transport within this film due to Ru(II/III) redox switching (electron hopping) was investigated and an apparent diffusion coefficient of ca. D app = 2 ( 1) 10-15 m2 s-1 was observed with minimal contributions from intra-molecular Ru-Ru interactions. The benefits of FIB-cut ITO junctions as a tool in determining charge hopping rates are highlighted. 2011 Elsevier B.V. All rights reserved.

UR - https://www.scopus.com/pages/publications/79956360542

UR - http://dx.doi.org/10.1016/j.jelechem.2011.04.010

U2 - 10.1016/j.jelechem.2011.04.010

DO - 10.1016/j.jelechem.2011.04.010

M3 - Article

SN - 1572-6657

VL - 657

SP - 196

EP - 201

JO - Journal of Electroanalytical Chemistry

JF - Journal of Electroanalytical Chemistry

IS - 1-2

ER -

Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate-TiO2 film

Abstract

Access to Document

Other files and links

Fingerprint

Cite this