Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate-TiO2 film

Charles Y Cummings, Jay D Wadhawan, Takuya Nakabayashi, Masa-aki Haga, Liza Rassaei, Sara E C Dale, Simon Bending, Martin Pumera, Stephen C Parker, Frank Marken

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Focused ion beam (FIB) machining allowed a sub-micron trench to be cut through tin-doped indium oxide (ITO) film on glass to give a generator - collector junction electrode with narrow gap (ca. 600 nm). A layer-by-layer deposited film composed of a dinuclear ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate (as the negative component) and nanoparticulate TiO2 (ca. 6 nm diameter, as the positive component) was formed and investigated first on simple ITO electrodes and then on ITO junction electrodes. The charge transport within this film due to Ru(II/III) redox switching (electron hopping) was investigated and an apparent diffusion coefficient of ca. D app = 2 ( 1) 10-15 m2 s-1 was observed with minimal contributions from intra-molecular Ru-Ru interactions. The benefits of FIB-cut ITO junctions as a tool in determining charge hopping rates are highlighted. 2011 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)196-201
Number of pages6
JournalJournal of Electroanalytical Chemistry
Volume657
Issue number1-2
DOIs
Publication statusPublished - Jul 2011

Fingerprint

Organophosphonates
Ruthenium
Pyridine
Focused ion beams
Electrodes
Electrons
Tin
Application programs
Indium
Charge transfer
Machining
Glass
Oxides
pyridine

Cite this

Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate-TiO2 film. / Cummings, Charles Y; Wadhawan, Jay D; Nakabayashi, Takuya; Haga, Masa-aki; Rassaei, Liza; Dale, Sara E C; Bending, Simon; Pumera, Martin; Parker, Stephen C; Marken, Frank.

In: Journal of Electroanalytical Chemistry, Vol. 657, No. 1-2, 07.2011, p. 196-201.

Research output: Contribution to journalArticle

@article{5bef1f345daa4b1687b19a4b5f470724,
title = "Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate-TiO2 film",
abstract = "Focused ion beam (FIB) machining allowed a sub-micron trench to be cut through tin-doped indium oxide (ITO) film on glass to give a generator - collector junction electrode with narrow gap (ca. 600 nm). A layer-by-layer deposited film composed of a dinuclear ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate (as the negative component) and nanoparticulate TiO2 (ca. 6 nm diameter, as the positive component) was formed and investigated first on simple ITO electrodes and then on ITO junction electrodes. The charge transport within this film due to Ru(II/III) redox switching (electron hopping) was investigated and an apparent diffusion coefficient of ca. D app = 2 ( 1) 10-15 m2 s-1 was observed with minimal contributions from intra-molecular Ru-Ru interactions. The benefits of FIB-cut ITO junctions as a tool in determining charge hopping rates are highlighted. 2011 Elsevier B.V. All rights reserved.",
author = "Cummings, {Charles Y} and Wadhawan, {Jay D} and Takuya Nakabayashi and Masa-aki Haga and Liza Rassaei and Dale, {Sara E C} and Simon Bending and Martin Pumera and Parker, {Stephen C} and Frank Marken",
year = "2011",
month = "7",
doi = "10.1016/j.jelechem.2011.04.010",
language = "English",
volume = "657",
pages = "196--201",
journal = "Journal of Electroanalytical Chemistry",
issn = "1572-6657",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Electron hopping rate measurements in ITO junctions: Charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate-TiO2 film

AU - Cummings, Charles Y

AU - Wadhawan, Jay D

AU - Nakabayashi, Takuya

AU - Haga, Masa-aki

AU - Rassaei, Liza

AU - Dale, Sara E C

AU - Bending, Simon

AU - Pumera, Martin

AU - Parker, Stephen C

AU - Marken, Frank

PY - 2011/7

Y1 - 2011/7

N2 - Focused ion beam (FIB) machining allowed a sub-micron trench to be cut through tin-doped indium oxide (ITO) film on glass to give a generator - collector junction electrode with narrow gap (ca. 600 nm). A layer-by-layer deposited film composed of a dinuclear ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate (as the negative component) and nanoparticulate TiO2 (ca. 6 nm diameter, as the positive component) was formed and investigated first on simple ITO electrodes and then on ITO junction electrodes. The charge transport within this film due to Ru(II/III) redox switching (electron hopping) was investigated and an apparent diffusion coefficient of ca. D app = 2 ( 1) 10-15 m2 s-1 was observed with minimal contributions from intra-molecular Ru-Ru interactions. The benefits of FIB-cut ITO junctions as a tool in determining charge hopping rates are highlighted. 2011 Elsevier B.V. All rights reserved.

AB - Focused ion beam (FIB) machining allowed a sub-micron trench to be cut through tin-doped indium oxide (ITO) film on glass to give a generator - collector junction electrode with narrow gap (ca. 600 nm). A layer-by-layer deposited film composed of a dinuclear ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate (as the negative component) and nanoparticulate TiO2 (ca. 6 nm diameter, as the positive component) was formed and investigated first on simple ITO electrodes and then on ITO junction electrodes. The charge transport within this film due to Ru(II/III) redox switching (electron hopping) was investigated and an apparent diffusion coefficient of ca. D app = 2 ( 1) 10-15 m2 s-1 was observed with minimal contributions from intra-molecular Ru-Ru interactions. The benefits of FIB-cut ITO junctions as a tool in determining charge hopping rates are highlighted. 2011 Elsevier B.V. All rights reserved.

UR - http://www.scopus.com/inward/record.url?scp=79956360542&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1016/j.jelechem.2011.04.010

U2 - 10.1016/j.jelechem.2011.04.010

DO - 10.1016/j.jelechem.2011.04.010

M3 - Article

VL - 657

SP - 196

EP - 201

JO - Journal of Electroanalytical Chemistry

JF - Journal of Electroanalytical Chemistry

SN - 1572-6657

IS - 1-2

ER -