Electron channeling contrast imaging of defects in III-nitride semiconductors

C. Trager-Cowan; G. Naresh-Kumar; N. Allehiani; S. Kraeusel; B. Hourahine; S. Vespucci; D. Thomson; J. Bruckbauer; G. Kusch; P. R. Edwards; R. W. Martin; C. Mauder; A. P. Day; A. Winkelmann; A. Vilalta-Clemente; A. J. Wilkinson; P. J. Parbrook; M. J. Kappers; M. A. Moram; R. A. Oliver; C. J. Humphreys; P. Shields; E. D. Le Boulbar; D. Maneuski; V. O'Shea; K. P. Mingard

doi:10.1017/S1431927614006849

Electron channeling contrast imaging of defects in III-nitride semiconductors

C. Trager-Cowan
, G. Naresh-Kumar
, N. Allehiani
, S. Kraeusel
, B. Hourahine
, S. Vespucci
, D. Thomson
, J. Bruckbauer
, G. Kusch
, P. R. Edwards
, R. W. Martin
, C. Mauder
, A. P. Day
, A. Winkelmann
, A. Vilalta-Clemente
, A. J. Wilkinson
, P. J. Parbrook
, M. J. Kappers
, M. A. Moram
, R. A. Oliver

C. J. Humphreys, P. Shields, E. D. Le Boulbar, D. Maneuski, V. O'Shea, K. P. Mingard

Department of Electronic & Electrical Engineering

University of Strathclyde
Aixtron SE
Aunt Daisy Scientific Ltd
Bruker Nano GmbH
University of Oxford
University College Cork
University of Cambridge
Imperial College London
University of Glasgow
National Physics Laboratory

Research output: Contribution to journal › Article › peer-review

1 Citation (SciVal)

217 Downloads (Pure)

Original language	English
Pages (from-to)	1024-1025
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	20
Issue number	3
Early online date	27 Aug 2014
DOIs	https://doi.org/10.1017/S1431927614006849
Publication status	Published - Aug 2014

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10.1017/S1431927614006849

ECCI Nitride defects M&M2014Accepted author manuscript, 139 KBLicence: Unspecified

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Trager-Cowan, C., Naresh-Kumar, G., Allehiani, N., Kraeusel, S., Hourahine, B., Vespucci, S., Thomson, D., Bruckbauer, J., Kusch, G., Edwards, P. R., Martin, R. W., Mauder, C., Day, A. P., Winkelmann, A., Vilalta-Clemente, A., Wilkinson, A. J., Parbrook, P. J., Kappers, M. J., Moram, M. A., ... Mingard, K. P. (2014). Electron channeling contrast imaging of defects in III-nitride semiconductors. Microscopy and Microanalysis, 20(3), 1024-1025. https://doi.org/10.1017/S1431927614006849

Trager-Cowan, C, Naresh-Kumar, G, Allehiani, N, Kraeusel, S, Hourahine, B, Vespucci, S, Thomson, D, Bruckbauer, J, Kusch, G, Edwards, PR, Martin, RW, Mauder, C, Day, AP, Winkelmann, A, Vilalta-Clemente, A, Wilkinson, AJ, Parbrook, PJ, Kappers, MJ, Moram, MA, Oliver, RA, Humphreys, CJ, Shields, P, Le Boulbar, ED, Maneuski, D, O'Shea, V & Mingard, KP 2014, 'Electron channeling contrast imaging of defects in III-nitride semiconductors', Microscopy and Microanalysis, vol. 20, no. 3, pp. 1024-1025. https://doi.org/10.1017/S1431927614006849

@article{7155158a994f442d9081e4b16a5ff170,

title = "Electron channeling contrast imaging of defects in III-nitride semiconductors",

author = "C. Trager-Cowan and G. Naresh-Kumar and N. Allehiani and S. Kraeusel and B. Hourahine and S. Vespucci and D. Thomson and J. Bruckbauer and G. Kusch and Edwards, \{P. R.\} and Martin, \{R. W.\} and C. Mauder and Day, \{A. P.\} and A. Winkelmann and A. Vilalta-Clemente and Wilkinson, \{A. J.\} and Parbrook, \{P. J.\} and Kappers, \{M. J.\} and Moram, \{M. A.\} and Oliver, \{R. A.\} and Humphreys, \{C. J.\} and P. Shields and \{Le Boulbar\}, \{E. D.\} and D. Maneuski and V. O'Shea and Mingard, \{K. P.\}",

year = "2014",

month = aug,

doi = "10.1017/S1431927614006849",

language = "English",

volume = "20",

pages = "1024--1025",

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AU - Trager-Cowan, C.

AU - Naresh-Kumar, G.

AU - Allehiani, N.

AU - Kraeusel, S.

AU - Hourahine, B.

AU - Vespucci, S.

AU - Thomson, D.

AU - Bruckbauer, J.

AU - Kusch, G.

AU - Edwards, P. R.

AU - Martin, R. W.

AU - Mauder, C.

AU - Day, A. P.

AU - Winkelmann, A.

AU - Vilalta-Clemente, A.

AU - Wilkinson, A. J.

AU - Parbrook, P. J.

AU - Kappers, M. J.

AU - Moram, M. A.

AU - Oliver, R. A.

AU - Humphreys, C. J.

AU - Shields, P.

AU - Le Boulbar, E. D.

AU - Maneuski, D.

AU - O'Shea, V.

AU - Mingard, K. P.

PY - 2014/8

Y1 - 2014/8

UR - https://www.scopus.com/pages/publications/84927935462

UR - http://dx.doi.org/10.1017/S1431927614006849

U2 - 10.1017/S1431927614006849

DO - 10.1017/S1431927614006849

M3 - Article

AN - SCOPUS:84927935462

SN - 1431-9276

VL - 20

SP - 1024

EP - 1025

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - 3

ER -

Electron channeling contrast imaging of defects in III-nitride semiconductors

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