Electron channeling contrast imaging of defects in III-nitride semiconductors

C. Trager-Cowan, G. Naresh-Kumar, N. Allehiani, S. Kraeusel, B. Hourahine, S. Vespucci, D. Thomson, J. Bruckbauer, G. Kusch, P. R. Edwards, R. W. Martin, C. Mauder, A. P. Day, A. Winkelmann, A. Vilalta-Clemente, A. J. Wilkinson, P. J. Parbrook, M. J. Kappers, M. A. Moram, R. A. OliverC. J. Humphreys, P. Shields, E. D. Le Boulbar, D. Maneuski, V. O'Shea, K. P. Mingard

Research output: Contribution to journalArticle

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Original languageEnglish
Pages (from-to)1024-1025
Number of pages2
JournalMicroscopy and Microanalysis
Volume20
Issue number3
Early online date27 Aug 2014
DOIs
Publication statusPublished - Aug 2014

Cite this

Trager-Cowan, C., Naresh-Kumar, G., Allehiani, N., Kraeusel, S., Hourahine, B., Vespucci, S., Thomson, D., Bruckbauer, J., Kusch, G., Edwards, P. R., Martin, R. W., Mauder, C., Day, A. P., Winkelmann, A., Vilalta-Clemente, A., Wilkinson, A. J., Parbrook, P. J., Kappers, M. J., Moram, M. A., ... Mingard, K. P. (2014). Electron channeling contrast imaging of defects in III-nitride semiconductors. Microscopy and Microanalysis, 20(3), 1024-1025. https://doi.org/10.1017/S1431927614006849