Electron channeling contrast imaging of defects in III-nitride semiconductors

C. Trager-Cowan; G. Naresh-Kumar; N. Allehiani; S. Kraeusel; B. Hourahine; S. Vespucci; D. Thomson; J. Bruckbauer; G. Kusch; P. R. Edwards; R. W. Martin; C. Mauder; A. P. Day; A. Winkelmann; A. Vilalta-Clemente; A. J. Wilkinson; P. J. Parbrook; M. J. Kappers; M. A. Moram; R. A. Oliver; C. J. Humphreys; P. Shields; E. D. Le Boulbar; D. Maneuski; V. O'Shea; K. P. Mingard

doi:10.1017/S1431927614006849

Electron channeling contrast imaging of defects in III-nitride semiconductors

C. Trager-Cowan, G. Naresh-Kumar, N. Allehiani, S. Kraeusel, B. Hourahine, S. Vespucci, D. Thomson, J. Bruckbauer, G. Kusch, P. R. Edwards, R. W. Martin, C. Mauder, A. P. Day, A. Winkelmann, A. Vilalta-Clemente, A. J. Wilkinson, P. J. Parbrook, M. J. Kappers, M. A. Moram, R. A. OliverC. J. Humphreys, P. Shields, E. D. Le Boulbar, D. Maneuski, V. O'Shea, K. P. Mingard

Department of Electronic & Electrical Engineering

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Original language	English
Pages (from-to)	1024-1025
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	20
Issue number	3
Early online date	27 Aug 2014
DOIs	https://doi.org/10.1017/S1431927614006849
Publication status	Published - Aug 2014

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10.1017/S1431927614006849

ECCI Nitride defects M&M2014Accepted author manuscript, 139 KBLicence: Unspecified

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Trager-Cowan, C., Naresh-Kumar, G., Allehiani, N., Kraeusel, S., Hourahine, B., Vespucci, S., Thomson, D., Bruckbauer, J., Kusch, G., Edwards, P. R., Martin, R. W., Mauder, C., Day, A. P., Winkelmann, A., Vilalta-Clemente, A., Wilkinson, A. J., Parbrook, P. J., Kappers, M. J., Moram, M. A., ... Mingard, K. P. (2014). Electron channeling contrast imaging of defects in III-nitride semiconductors. Microscopy and Microanalysis, 20(3), 1024-1025. https://doi.org/10.1017/S1431927614006849

Trager-Cowan, C, Naresh-Kumar, G, Allehiani, N, Kraeusel, S, Hourahine, B, Vespucci, S, Thomson, D, Bruckbauer, J, Kusch, G, Edwards, PR, Martin, RW, Mauder, C, Day, AP, Winkelmann, A, Vilalta-Clemente, A, Wilkinson, AJ, Parbrook, PJ, Kappers, MJ, Moram, MA, Oliver, RA, Humphreys, CJ, Shields, P, Le Boulbar, ED, Maneuski, D, O'Shea, V & Mingard, KP 2014, 'Electron channeling contrast imaging of defects in III-nitride semiconductors', Microscopy and Microanalysis, vol. 20, no. 3, pp. 1024-1025. https://doi.org/10.1017/S1431927614006849

@article{7155158a994f442d9081e4b16a5ff170,

title = "Electron channeling contrast imaging of defects in III-nitride semiconductors",

author = "C. Trager-Cowan and G. Naresh-Kumar and N. Allehiani and S. Kraeusel and B. Hourahine and S. Vespucci and D. Thomson and J. Bruckbauer and G. Kusch and Edwards, {P. R.} and Martin, {R. W.} and C. Mauder and Day, {A. P.} and A. Winkelmann and A. Vilalta-Clemente and Wilkinson, {A. J.} and Parbrook, {P. J.} and Kappers, {M. J.} and Moram, {M. A.} and Oliver, {R. A.} and Humphreys, {C. J.} and P. Shields and {Le Boulbar}, {E. D.} and D. Maneuski and V. O'Shea and Mingard, {K. P.}",

year = "2014",

month = aug,

doi = "10.1017/S1431927614006849",

language = "English",

volume = "20",

pages = "1024--1025",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

publisher = "Cambridge University Press",

number = "3",

}

TY - JOUR

T1 - Electron channeling contrast imaging of defects in III-nitride semiconductors

AU - Trager-Cowan, C.

AU - Naresh-Kumar, G.

AU - Allehiani, N.

AU - Kraeusel, S.

AU - Hourahine, B.

AU - Vespucci, S.

AU - Thomson, D.

AU - Bruckbauer, J.

AU - Kusch, G.

AU - Edwards, P. R.

AU - Martin, R. W.

AU - Mauder, C.

AU - Day, A. P.

AU - Winkelmann, A.

AU - Vilalta-Clemente, A.

AU - Wilkinson, A. J.

AU - Parbrook, P. J.

AU - Kappers, M. J.

AU - Moram, M. A.

AU - Oliver, R. A.

AU - Humphreys, C. J.

AU - Shields, P.

AU - Le Boulbar, E. D.

AU - Maneuski, D.

AU - O'Shea, V.

AU - Mingard, K. P.

PY - 2014/8

Y1 - 2014/8

UR - http://www.scopus.com/inward/record.url?scp=84927935462&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1017/S1431927614006849

U2 - 10.1017/S1431927614006849

DO - 10.1017/S1431927614006849

M3 - Article

AN - SCOPUS:84927935462

VL - 20

SP - 1024

EP - 1025

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

SN - 1431-9276

IS - 3

ER -

Electron channeling contrast imaging of defects in III-nitride semiconductors

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