Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting

Yoshitaka Niida; Kei Takashina; Yukinori Ono; Akira Fujiwara; Yoshiro Hirayama

doi:10.1063/1.4803014

Electron and hole mobilities at a Si/SiO₂ interface with giant valley splitting

Yoshitaka Niida
, Kei Takashina
, Yukinori Ono
, Akira Fujiwara
, Yoshiro Hirayama

Department of Physics

Tohoku University
NTT Basic Research Laboratories
ERATO Nuclear Spin Electronics Project

Research output: Contribution to journal › Article › peer-review

11 Citations (SciVal)

381 Downloads (Pure)

Abstract

We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard Si/thermal oxide (T-SiO2) interface in the same silicon-on-insulator device. In contrast to the electron mobility, which is lower at the Si/BOX interface, the hole mobility at the Si/BOX interface is found to be slightly higher than that at the Si/T-SiO2 interface.

Original language	English
Article number	191603
Journal	Applied Physics Letters
Volume	102
Issue number	19
Early online date	15 May 2013
DOIs	https://doi.org/10.1063/1.4803014
Publication status	Published - May 2013

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10.1063/1.4803014

ApplPhysLett 102 191603
Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Niida, Y., Takashina, K., Ono, Y., Fujiwara, A., & Hirayama, Y. (2013). Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting. Applied Physics Letters, 102(19), 191603 and may be found at http://dx.doi.org/10.1063/1.4803014
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Cite this

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title = "Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting",

abstract = "We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard Si/thermal oxide (T-SiO2) interface in the same silicon-on-insulator device. In contrast to the electron mobility, which is lower at the Si/BOX interface, the hole mobility at the Si/BOX interface is found to be slightly higher than that at the Si/T-SiO2 interface.",

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AU - Hirayama, Yoshiro

PY - 2013/5

Y1 - 2013/5

N2 - We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard Si/thermal oxide (T-SiO2) interface in the same silicon-on-insulator device. In contrast to the electron mobility, which is lower at the Si/BOX interface, the hole mobility at the Si/BOX interface is found to be slightly higher than that at the Si/T-SiO2 interface.

AB - We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard Si/thermal oxide (T-SiO2) interface in the same silicon-on-insulator device. In contrast to the electron mobility, which is lower at the Si/BOX interface, the hole mobility at the Si/BOX interface is found to be slightly higher than that at the Si/T-SiO2 interface.

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ER -

Electron and hole mobilities at a Si/SiO₂ interface with giant valley splitting

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Silicon Valleytronics

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Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting

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Electron and hole mobilities at a Si/SiO₂ interface with giant valley splitting