Electroforming process in metal-oxide-polymer resistive switching memories

Qian Chen; Henrique L. Gomes; Asal Kiazadeh; Paulo R F Rocha; Dago M. De Leeuw; Stefan C J Meskers

doi:10.1007/978-3-642-28255-3_58

Electroforming process in metal-oxide-polymer resistive switching memories

Qian Chen
, Henrique L. Gomes
, Asal Kiazadeh
, Paulo R F Rocha
, Dago M. De Leeuw
, Stefan C J Meskers

Department of Electronic & Electrical Engineering

University of Algarve
Center of Electronics Optoelectronics and Telecommunications
Philips Research Laboratories
Eindhoven University of Technology

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

1 Citation (SciVal)

Abstract

Electroforming of an Al/Al ₂O ₃/polymer/Al resistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current-voltage characteristics and non-volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x10 ¹⁷ /cm ². It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics.

Original language	English
Title of host publication	Technological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings
Pages	527-534
Number of pages	8
Volume	372 AICT
DOIs	https://doi.org/10.1007/978-3-642-28255-3_58
Publication status	Published - 2012
Event	3rd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012 - Costa de Caparica, Portugal Duration: 27 Feb 2012 → 29 Feb 2012

Publication series

Name	IFIP Advances in Information and Communication Technology
Volume	372 AICT
ISSN (Print)	18684238

Conference

Conference	3rd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012
Country/Territory	Portugal
City	Costa de Caparica
Period	27/02/12 → 29/02/12

Keywords

electroforming softbreakdown
non-volatile memory
Resistive Random Access Memory (RRAM)

ASJC Scopus subject areas

Information Systems and Management

Access to Document

10.1007/978-3-642-28255-3_58

Cite this

Chen, Q., Gomes, H. L., Kiazadeh, A., Rocha, P. R. F., De Leeuw, D. M., & Meskers, S. C. J. (2012). Electroforming process in metal-oxide-polymer resistive switching memories. In Technological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings (Vol. 372 AICT, pp. 527-534). (IFIP Advances in Information and Communication Technology; Vol. 372 AICT). https://doi.org/10.1007/978-3-642-28255-3_58

Electroforming process in metal-oxide-polymer resistive switching memories. / Chen, Qian; Gomes, Henrique L.; Kiazadeh, Asal et al.
Technological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings. Vol. 372 AICT 2012. p. 527-534 (IFIP Advances in Information and Communication Technology; Vol. 372 AICT).

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Chen, Q, Gomes, HL, Kiazadeh, A, Rocha, PRF, De Leeuw, DM & Meskers, SCJ 2012, Electroforming process in metal-oxide-polymer resistive switching memories. in Technological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings. vol. 372 AICT, IFIP Advances in Information and Communication Technology, vol. 372 AICT, pp. 527-534, 3rd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Costa de Caparica, Portugal, 27/02/12. https://doi.org/10.1007/978-3-642-28255-3_58

Chen Q, Gomes HL, Kiazadeh A, Rocha PRF, De Leeuw DM, Meskers SCJ. Electroforming process in metal-oxide-polymer resistive switching memories. In Technological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings. Vol. 372 AICT. 2012. p. 527-534. (IFIP Advances in Information and Communication Technology). doi: 10.1007/978-3-642-28255-3_58

Chen, Qian ; Gomes, Henrique L. ; Kiazadeh, Asal et al. / Electroforming process in metal-oxide-polymer resistive switching memories. Technological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings. Vol. 372 AICT 2012. pp. 527-534 (IFIP Advances in Information and Communication Technology).

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abstract = "Electroforming of an Al/Al 2O 3/polymer/Al resistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current-voltage characteristics and non-volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x10 17 /cm 2. It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics.",

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AB - Electroforming of an Al/Al 2O 3/polymer/Al resistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current-voltage characteristics and non-volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x10 17 /cm 2. It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics.

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Electroforming process in metal-oxide-polymer resistive switching memories

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Keywords

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