Electroforming process in metal-oxide-polymer resistive switching memories

Qian Chen, Henrique L. Gomes, Asal Kiazadeh, Paulo R F Rocha, Dago M. De Leeuw, Stefan C J Meskers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electroforming of an Al/Al 2O 3/polymer/Al resistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current-voltage characteristics and non-volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x10 17 /cm 2. It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics.

Original languageEnglish
Title of host publicationTechnological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings
Pages527-534
Number of pages8
Volume372 AICT
DOIs
Publication statusPublished - 2012
Event3rd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012 - Costa de Caparica, Portugal
Duration: 27 Feb 201229 Feb 2012

Publication series

NameIFIP Advances in Information and Communication Technology
Volume372 AICT
ISSN (Print)18684238

Conference

Conference3rd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012
CountryPortugal
CityCosta de Caparica
Period27/02/1229/02/12

Keywords

  • electroforming softbreakdown
  • non-volatile memory
  • Resistive Random Access Memory (RRAM)

ASJC Scopus subject areas

  • Information Systems and Management

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