Electroforming process in metal-oxide-polymer resistive switching memories

Qian Chen, Henrique L. Gomes, Asal Kiazadeh, Paulo R F Rocha, Dago M. De Leeuw, Stefan C J Meskers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electroforming of an Al/Al 2O 3/polymer/Al resistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current-voltage characteristics and non-volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x10 17 /cm 2. It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics.

Original languageEnglish
Title of host publicationTechnological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings
Pages527-534
Number of pages8
Volume372 AICT
DOIs
Publication statusPublished - 2012
Event3rd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012 - Costa de Caparica, Portugal
Duration: 27 Feb 201229 Feb 2012

Publication series

NameIFIP Advances in Information and Communication Technology
Volume372 AICT
ISSN (Print)18684238

Conference

Conference3rd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012
CountryPortugal
CityCosta de Caparica
Period27/02/1229/02/12

Fingerprint

Metals
Breakdown
Polymers
Kinetics
Trigger
Trap
Experiment

Keywords

  • electroforming softbreakdown
  • non-volatile memory
  • Resistive Random Access Memory (RRAM)

ASJC Scopus subject areas

  • Information Systems and Management

Cite this

Chen, Q., Gomes, H. L., Kiazadeh, A., Rocha, P. R. F., De Leeuw, D. M., & Meskers, S. C. J. (2012). Electroforming process in metal-oxide-polymer resistive switching memories. In Technological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings (Vol. 372 AICT, pp. 527-534). (IFIP Advances in Information and Communication Technology; Vol. 372 AICT). https://doi.org/10.1007/978-3-642-28255-3_58

Electroforming process in metal-oxide-polymer resistive switching memories. / Chen, Qian; Gomes, Henrique L.; Kiazadeh, Asal; Rocha, Paulo R F; De Leeuw, Dago M.; Meskers, Stefan C J.

Technological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings. Vol. 372 AICT 2012. p. 527-534 (IFIP Advances in Information and Communication Technology; Vol. 372 AICT).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, Q, Gomes, HL, Kiazadeh, A, Rocha, PRF, De Leeuw, DM & Meskers, SCJ 2012, Electroforming process in metal-oxide-polymer resistive switching memories. in Technological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings. vol. 372 AICT, IFIP Advances in Information and Communication Technology, vol. 372 AICT, pp. 527-534, 3rd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Costa de Caparica, Portugal, 27/02/12. https://doi.org/10.1007/978-3-642-28255-3_58
Chen Q, Gomes HL, Kiazadeh A, Rocha PRF, De Leeuw DM, Meskers SCJ. Electroforming process in metal-oxide-polymer resistive switching memories. In Technological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings. Vol. 372 AICT. 2012. p. 527-534. (IFIP Advances in Information and Communication Technology). https://doi.org/10.1007/978-3-642-28255-3_58
Chen, Qian ; Gomes, Henrique L. ; Kiazadeh, Asal ; Rocha, Paulo R F ; De Leeuw, Dago M. ; Meskers, Stefan C J. / Electroforming process in metal-oxide-polymer resistive switching memories. Technological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings. Vol. 372 AICT 2012. pp. 527-534 (IFIP Advances in Information and Communication Technology).
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