Electroactive nanoporous metal oxides and chalcogenides by chemical design

Christopher H. Hendon, Keith T. Butler, Alex M. Ganose, Yuriy Román-Leshkov, David O. Scanlon, Geoffrey A. Ozin, Aron Walsh

Research output: Contribution to journalArticle

  • 4 Citations

Abstract

The archetypal silica- and aluminosilicate-based zeolite-type materials are renowned for wide-ranging applications in heterogeneous catalysis, gas-separation and ion-exchange. Their compositional space can be expanded to include nanoporous metal chalcogenides, exemplified by germanium and tin sulfides and selenides. By comparison with the properties of bulk metal dichalcogenides and their 2D derivatives, these open-framework analogues may be viewed as three-dimensional semiconductors filled with nanometer voids. Applications exist in a range of molecule size and shape discriminating devices. However, what is the electronic structure of nanoporous metal chalcogenides? Herein, materials modeling is used to describe the properties of a homologous series of nanoporous metal chalcogenides denoted np-MX2, where M = Si, Ge, Sn, Pb, and X = O, S, Se, Te, with Sodalite, LTA and aluminum chromium phosphate-1 structure types. Depending on the choice of metal and anion their properties can be tuned from insulators to semiconductors to metals with additional modification achieved through doping, solid solutions, and inclusion (with fullerene, quantum dots, and hole transport materials). These systems form the basis of a new branch of semiconductor nanochemistry in three dimensions.

LanguageEnglish
Pages3663-3670
Number of pages8
JournalChemistry of Materials
Volume29
Issue number8
DOIs
StatusPublished - 25 Apr 2017

Fingerprint

Chalcogenides
Oxides
Metals
Semiconductor materials
Germanium
Fullerenes
Zeolites
Aluminosilicates
Aluminum
Silicon Dioxide
Tin
Catalysis
Semiconductor quantum dots
Electronic structure
Anions
Solid solutions
Chromium
Ion exchange
Phosphates
Negative ions

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Hendon, C. H., Butler, K. T., Ganose, A. M., Román-Leshkov, Y., Scanlon, D. O., Ozin, G. A., & Walsh, A. (2017). Electroactive nanoporous metal oxides and chalcogenides by chemical design. Chemistry of Materials, 29(8), 3663-3670. https://doi.org/10.1021/acs.chemmater.7b00464

Electroactive nanoporous metal oxides and chalcogenides by chemical design. / Hendon, Christopher H.; Butler, Keith T.; Ganose, Alex M.; Román-Leshkov, Yuriy; Scanlon, David O.; Ozin, Geoffrey A.; Walsh, Aron.

In: Chemistry of Materials, Vol. 29, No. 8, 25.04.2017, p. 3663-3670.

Research output: Contribution to journalArticle

Hendon, CH, Butler, KT, Ganose, AM, Román-Leshkov, Y, Scanlon, DO, Ozin, GA & Walsh, A 2017, 'Electroactive nanoporous metal oxides and chalcogenides by chemical design' Chemistry of Materials, vol. 29, no. 8, pp. 3663-3670. https://doi.org/10.1021/acs.chemmater.7b00464
Hendon CH, Butler KT, Ganose AM, Román-Leshkov Y, Scanlon DO, Ozin GA et al. Electroactive nanoporous metal oxides and chalcogenides by chemical design. Chemistry of Materials. 2017 Apr 25;29(8):3663-3670. https://doi.org/10.1021/acs.chemmater.7b00464
Hendon, Christopher H. ; Butler, Keith T. ; Ganose, Alex M. ; Román-Leshkov, Yuriy ; Scanlon, David O. ; Ozin, Geoffrey A. ; Walsh, Aron. / Electroactive nanoporous metal oxides and chalcogenides by chemical design. In: Chemistry of Materials. 2017 ; Vol. 29, No. 8. pp. 3663-3670.
@article{e78674396d5d43b9a3492ab9eeb2341d,
title = "Electroactive nanoporous metal oxides and chalcogenides by chemical design",
abstract = "The archetypal silica- and aluminosilicate-based zeolite-type materials are renowned for wide-ranging applications in heterogeneous catalysis, gas-separation and ion-exchange. Their compositional space can be expanded to include nanoporous metal chalcogenides, exemplified by germanium and tin sulfides and selenides. By comparison with the properties of bulk metal dichalcogenides and their 2D derivatives, these open-framework analogues may be viewed as three-dimensional semiconductors filled with nanometer voids. Applications exist in a range of molecule size and shape discriminating devices. However, what is the electronic structure of nanoporous metal chalcogenides? Herein, materials modeling is used to describe the properties of a homologous series of nanoporous metal chalcogenides denoted np-MX2, where M = Si, Ge, Sn, Pb, and X = O, S, Se, Te, with Sodalite, LTA and aluminum chromium phosphate-1 structure types. Depending on the choice of metal and anion their properties can be tuned from insulators to semiconductors to metals with additional modification achieved through doping, solid solutions, and inclusion (with fullerene, quantum dots, and hole transport materials). These systems form the basis of a new branch of semiconductor nanochemistry in three dimensions.",
author = "Hendon, {Christopher H.} and Butler, {Keith T.} and Ganose, {Alex M.} and Yuriy Rom{\'a}n-Leshkov and Scanlon, {David O.} and Ozin, {Geoffrey A.} and Aron Walsh",
year = "2017",
month = "4",
day = "25",
doi = "10.1021/acs.chemmater.7b00464",
language = "English",
volume = "29",
pages = "3663--3670",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "8",

}

TY - JOUR

T1 - Electroactive nanoporous metal oxides and chalcogenides by chemical design

AU - Hendon, Christopher H.

AU - Butler, Keith T.

AU - Ganose, Alex M.

AU - Román-Leshkov, Yuriy

AU - Scanlon, David O.

AU - Ozin, Geoffrey A.

AU - Walsh, Aron

PY - 2017/4/25

Y1 - 2017/4/25

N2 - The archetypal silica- and aluminosilicate-based zeolite-type materials are renowned for wide-ranging applications in heterogeneous catalysis, gas-separation and ion-exchange. Their compositional space can be expanded to include nanoporous metal chalcogenides, exemplified by germanium and tin sulfides and selenides. By comparison with the properties of bulk metal dichalcogenides and their 2D derivatives, these open-framework analogues may be viewed as three-dimensional semiconductors filled with nanometer voids. Applications exist in a range of molecule size and shape discriminating devices. However, what is the electronic structure of nanoporous metal chalcogenides? Herein, materials modeling is used to describe the properties of a homologous series of nanoporous metal chalcogenides denoted np-MX2, where M = Si, Ge, Sn, Pb, and X = O, S, Se, Te, with Sodalite, LTA and aluminum chromium phosphate-1 structure types. Depending on the choice of metal and anion their properties can be tuned from insulators to semiconductors to metals with additional modification achieved through doping, solid solutions, and inclusion (with fullerene, quantum dots, and hole transport materials). These systems form the basis of a new branch of semiconductor nanochemistry in three dimensions.

AB - The archetypal silica- and aluminosilicate-based zeolite-type materials are renowned for wide-ranging applications in heterogeneous catalysis, gas-separation and ion-exchange. Their compositional space can be expanded to include nanoporous metal chalcogenides, exemplified by germanium and tin sulfides and selenides. By comparison with the properties of bulk metal dichalcogenides and their 2D derivatives, these open-framework analogues may be viewed as three-dimensional semiconductors filled with nanometer voids. Applications exist in a range of molecule size and shape discriminating devices. However, what is the electronic structure of nanoporous metal chalcogenides? Herein, materials modeling is used to describe the properties of a homologous series of nanoporous metal chalcogenides denoted np-MX2, where M = Si, Ge, Sn, Pb, and X = O, S, Se, Te, with Sodalite, LTA and aluminum chromium phosphate-1 structure types. Depending on the choice of metal and anion their properties can be tuned from insulators to semiconductors to metals with additional modification achieved through doping, solid solutions, and inclusion (with fullerene, quantum dots, and hole transport materials). These systems form the basis of a new branch of semiconductor nanochemistry in three dimensions.

UR - http://www.scopus.com/inward/record.url?scp=85018661766&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1021/acs.chemmater.7b00464

U2 - 10.1021/acs.chemmater.7b00464

DO - 10.1021/acs.chemmater.7b00464

M3 - Article

VL - 29

SP - 3663

EP - 3670

JO - Chemistry of Materials

T2 - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 8

ER -